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Details of Grant 

EPSRC Reference: GR/R88809/01
Title: Medium energy ion scattering studies of surface and near surface structure and composition with atomic resolution
Principal Investigator: Turner, Dr TS
Other Investigators:
Thompson, Professor GE van den Berg, Professor J Baddeley, Professor C
Cropper, Dr MD Tear, Dr SP Sealy, Professor B
Jeynes, Professor C McConville, Professor CF Woodruff, Professor DP
Skeldon, Professor P Chalker, Professor PR
Researcher Co-Investigators:
Dr P Bailey Dr TCQ Noakes
Project Partners:
Department: Technology
Organisation: STFC Laboratories (Grouped)
Scheme: Small Facility Operations
Starts: 01 April 2002 Ends: 31 March 2006 Value (£): 1,236,702
EPSRC Research Topic Classifications:
Surfaces & Interfaces
EPSRC Industrial Sector Classifications:
Related Grants:
GR/R88793/01 GR/R88823/01
Panel History:  
Summary on Grant Application Form
SummaryDescribe the proposed research in about 200 words.The primary motivation for the grant submission arises from the EPSRC policy decision to change the funding of the Daresbury MEIS facility from a service level agreement to a responsive mode grant from April 2002. The proposal aims to built on the success of the research programmes carried at the facility to extend the operation and enhance the facilities. Sample preparation will be aided by the addition of evaporator calls and the ion scattering spectrometer will be complemented by the addition of ME-ERDA. These developments will further enhance the international status of the facility and enable untapped research potential to be realised in the detection of light ions including hydrogen.The number of co-investigators' programmes demanding medium energy ion scattering reflects the diverse range of the research. The programmes imaginatively explok the ability to probe the elemental composition and structure of the surface and buried layers of crystalline material. Besides the structural studies of metals, alloys, oxides and metals on semiconductors, co-investigators' work includes: the study of metallic catalysts' surfaces; investigation of metal epitaxial growth; study of thin films and multilayers and extensive studies of semiconductor materials and systems. This divers range of research activities is possible because of the unique status of Daresbury MEIS as a user facility. Thus its combined operation and development represent a highly efficient and
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