| EP/D032210/1 | University of Surrey Ion Beam Centre | (C) |
| GR/S71835/01 | Characterisation of a new class of thin film transistors | (C) |
| GR/S74638/01 | Ion implantation of Sb+ for ultra-shallow n-type layers in silicon: for future generation devices | (C) |
| GR/S48363/01 | Community Meeting on the Future of Ion Surface Interactions Research in the UK | (C) |
| GR/R96606/01 | PLATFORM: Platform Grant for the Advanced Technology Institute at the University of Surrey | (C) |
| GR/R88809/01 | Medium energy ion scattering studies of surface and near surface structure and composition with atomic resolution | (C) |
| GR/R50097/01 | The University of Surrey Ion Beam Centre | (C) |
| GR/R03778/01 | Sigec Hbts On Insulator For Rf Communications | (C) |
| GR/N32969/01 | FUTURE TECHNOLOGIES FOR THE ELECTRICAL ISOLATION OF III-V SEMICONDUCTOR DEVICES | (P) |
| GR/M94434/01 | AN ENHANCED UK FACILITY FOR ION BEAM ANALYSIS OF KEY STRATEGIC MATERIALS | (P) |
| GR/M70865/01 | ION ASSISTED PROCESSES FOR LOW TEMPERATURE POLYSILICON AMLCD ON PLASTIC | (C) |
| GR/M54001/01 | A DEPTH-TUNABLE PROBE, WITH MAPPING CAPABILITY, FOR LOW ENERGY ION IMPLANTATION DOSIMETRY | (P) |
| GR/M37820/01 | LIGHT EMISSION FROM ERBIUM DOPED SILICON BASED THIN FILMS ON SILICON | (P) |
| GR/M37837/01 | LIGHT EMISSION FROM ERBIUM DOPED SILICON BASED THIN FILMS ON SILICON | (P) |
| GR/L71698/01 | ROPA: LIGHT EMISSION FROM DISORDERED GROUP III NITRIDES FOR FLAT PANEL DISPLAY APPLICATIONS | (P) |
| GR/L77638/01 | PLANAR AMORPHOUS SILICON MATRIX FIELD EMISSION DISPLAYS | (C) |
| GR/L78512/01 | THE UNIVERSITY OF SURREY ION BEAM CENTRE | (P) |
| GR/L50013/01 | ION BEAM SYNTHESIS OF SIGE HBTS AND HMOSTS FOR HIGH SPEED, LOW POWER COMMUNICATIONS APPLICATIONS | (C) |
| GR/L09202/01 | ELECTRONIC DOPING OF AMORPHOUS CARBON THIN FILMS | (C) |
| GR/K62736/01 | CURRENT INDUCED CONDUCTIVITY IN AMORPHOUS SILICON ALLOYS | (P) |
| GR/K56247/01 | THE UNIVERSITY OF SURREY ION BEAM FACILITY FOR MICROELECTRONICS | (P) |
| GR/J73520/01 | ION IMPLANTATION STUDIES OF AMORPHOUS SILICON BASED MATERIALS | (P) |
| GR/J50187/01 | OPTICAL EMISSION FROM ION BEAMS SYNTHESISED (100) SI/B-FESI2/SI STRUCTURES AT 1.5 UM | (C) |
| GR/J49433/01 | ION-IMPLANTATION OF QUANTUM SEMICONDUCTOR DEVICES | (C) |
| GR/J42298/01 | THE UNIVERSITY OF SURREY ION BEAM FACILITY FOR MICROELECTRONICS | (P) |
| GR/J14585/01 | CONTROL OF DEFECT AND DOPANT DISTRIBUTIONS IN ION IMPLANTED SIGE HBT STRUCTURES | (C) |
| GR/H74742/01 | FABRICATION OF SEMICONDUCTING BFESI2/SI HETEROSTRUCTURES BY ION BEAM SYNTHESIS | (C) |
| GR/H16452/01 | THE UNIVERSITY OF SURREY ION BEAM FACILITY FOR MICROELECTRONICS | (P) |
| GR/G12924/01 | STUDIES OF THE STRUCTURAL ENVIRONMENT AROUND ION IMPLANTED DOPANTS IN GAAS USING X-RAY TECHNIQUES | (P) |
| GR/G12948/01 | ION BEAM SYNTHESIS OF SILICIDES FOR DEVICES APPLICATIONS | (C) |
| GR/F66078/01 | STUDY OF PROCESS INDUCED DEFECTS IN MEV IMPLANTED AND PRE-AMORPHIZED SILICON | (C) |
| GR/F63916/01 | THE UNIVERSITY OF SURREY ION BEAM FACILITY FOR MICROELECTRONICS | (P) |
| GR/F34572/01 | HIGH PRECISION CHEMICAL ANALYSIS FOR FUTURE SILICON MATERIALS AND DEVICES | (C) |
| GR/F35142/01 | MATERIALS PROCESING FOR ADVANCED SOI SUBSTRATES | (C) |
| GR/F06326/01 | THE MODELLING OF ACTIVATION MECHANISMS IN ION IMPLANTED GAAS | (P) |
| GR/E40736/01 | THE PHYSICS AND ENGINEERING OF III-V STRAINED LAYER SUPERLATTICES | (C) |