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Details of Grant 

EPSRC Reference: GR/M85180/01
Title: HYDROGEN IN SEMICONDUCTOR SILICON
Principal Investigator: Peaker, Professor AR
Other Investigators:
Newman, Professor R Evans-Freeman, Professor J
Researcher Co-Investigators:
Project Partners:
Philips Soitec SA Wacker Siltronic AG
Department: Electrical Engineering & Electronics
Organisation: UMIST
Scheme: Standard Research (Pre-FEC)
Starts: 06 January 2000 Ends: 05 January 2003 Value (£): 273,446
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Although hydrogen is known to have a crucial role in amorphous silicon technologies it is only very recently that its significance in single crystal silicon material and devices has become apparent. It is now well established that hydrogen is introduced into silicon by many processes used in the semiconductor industry. The work proposed under this contract aims to quantify the effect of hydrogen in single crystal silicon in relation to its role in reacting with transition metals, impurities and intrinsic defects. Predictions can then be made in relation to the use of hydrogen for novel semiconductor technologies and the stability of device characteristics where hydrogen plays a role. It is considered that this is a very appropriate time to launch such a study as the new technique of high resolution (Laplace) DLTS and major developments in ab initio calculations of defect properties are now available and will be applied in this study in conjunction with the results from previous optical studies. As hydrogen can exist in many forms in silicon we also aim to quantify hydrogen in silicon in terms of the concentrations bonded to defects, impurities and surfaces and that present in molecular form.
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