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Name: |
Professor R Newman |
Organisation: |
Imperial College London |
Department: |
Electronic Materials & Devices (IRC) |
Current EPSRC-Supported Research
Topics: |
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Current EPSRC Support |
There is no current EPSRC Support |
Previous EPSRC Support |
GR/R19595/01 | Hydrogen In Semiconductor Silicon ... Dynamic Properties of Defects | (C) |
GR/M85180/01 | HYDROGEN IN SEMICONDUCTOR SILICON | (C) |
GR/K96977/01 | INTERDISCIPLINARY RESEARCH CENTRE FOR SEMICONDUCTOR MATERIALS 1996-1999 | (C) |
GR/J97540/01 | IRC FOR THE STUDY OF THE GROWTH, CHARACTERISATION AND APPLICATION OF SEMICONDUCTOR MATERIALS | (C) |
GR/H18777/01 | UNIVERSITY OF LONDON SEMICONDUCTOR MATERIALS IRC TWO YEAR RESOURCE REVIEW | (C) |
GR/H21753/01 | UNIVERSITY OF LONDON SEMICONDUCTOR MATERIALS IRC OVERHEAD ELEMENT 1 APRIL 1991 TO 31 JULY 1992 | (C) |
GR/F98147/01 | LOW TEMPERATURE GROWTH OF SILICON FILMS FROM MOLECULAR BEAMS OF SILANE OR DISLANE | (P) |
GR/F71386/01 | HYDROGEN IN SILICON | (P) |
GR/G01638/01 | SPECTROSCOPIC INVESTIGATIONS OF POINT DEFECT INTERACTIONS RESULTING FROM PLASTIC DEFORMATION OF GAAS | (P) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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