Details of Grant 

EPSRC Reference:	GR/M89669/01
Title:	THE DEVELOPMENT OF IMPROVED MOCVD GROWTH TECHNIQUES FOR GALLIUM NITRIDE LAYERS AND DEVICE HETEROSTRUCTURES
Principal Investigator:	Dawson, Professor P
Other Investigators:	Blamire, Professor M Humphreys, Professor Sir C Barber, Professor Z Harris, Dr J
Researcher Co-Investigators:
Project Partners:
Department:	Physics
Organisation:	UMIST
Scheme:	Standard Research (Pre-FEC)
Starts:	01 June 2000	Ends:	31 May 2003	Value (£):	72,465
EPSRC Research Topic Classifications:	Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics
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Panel History:
Summary on Grant Application Form
There is an immense effort worldwide devoted to the development of GaN-based devices. The most successful GaN has been grown by MOCVD, but the UK is lagging behind. Thomas Swan, a highly successful UK SME based in Cambridgeshire, is one of the worlds leading GaN growth equipment manufacturers, and it will donate its latest MOCVD GaN growth equipment (list price 500,000) to the Materials Science Department at the Cambridge University on the condition that the EPSRC funds the installation, running costs and personnel. The Department has an internationally recognised GaN research activity but no in-house GaN growth facility. Dr. E. J. Thrush of Thomas Swan, who has an international reputation for MOCVD growth, will interact closely with the growth programme and provide state of the art training for our growers and support for system operation. This collaborative proposal will correlate optical properties measured at UMIST and electrical properties measured at UCL with the microstructure of GaN layers and devices grown at Cambridge. The research proposal (see objectives above for a summary) will establish the UK as a major international player in the growth of high quality GaN-based layers and GaN-based optical and electronic devices.Keywords describing areas of proposal.Materials, Devices, Semiconductors, Gallium Nitride, MOCVD growth, LEDs lasers, transistors
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