| EP/P00945X/1 | Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs | (C) |
| EP/N017927/1 | Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates | (P) |
| EP/M010589/1 | Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal) | (P) |
| EP/K008323/1 | Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. | (C) |
| EP/K014471/1 | Silicon Compatible GaN Power Electronics | (C) |
| EP/J003603/1 | Study of semi-polar and non-polar nitride based structures for opto-electronic device applications | (C) |
| EP/I012591/1 | Lighting the Future | (P) |
| EP/H019324/1 | Nitrides for the 21st century | (P) |
| EP/G042330/1 | Science Bridge Award USA: Harnessing Materials for Energy | (P) |
| TS/G001383/1 | LED Lighting for the 21st Century | (P) |
| EP/F018614/1 | Defect reduction in GaN using the in-situ growth of transition metal nitride layers | (P) |
| EP/E029892/1 | Quantitative, high resolution two-and-three dimensional dopant mapping in the Scanning Electron Microscope by Secondary Electron Spectro-Micro | (P) |
| EP/E012477/1 | An Advanced SEM-FIB Dual Beam Microscope for Three-Dimensional Mesoscale Fabrication, Imaging and Analysis | (C) |
| EP/E035167/1 | Materials Challenges in GaN-based Light Emitting Structures | (P) |
| EP/E031625/1 | Optimising GaN light emitting structures on free-standing GaN substrates | (P) |
| EP/C532171/1 | Tomographic Diffractive Imaging | (P) |
| GR/S28150/01 | Gallium Nitride LEDs for Display Applications | (P) |
| GR/S80059/01 | Engineering Metals for High Performance Applications in Aerospace and Related Technologies | (C) |
| GR/S57914/01 | Advanced Optical Functionality in GaN based Optical Components | (C) |
| GR/S49391/01 | Next Generation GaN-based Materials | (P) |
| GR/S26156/01 | DARP: Advanced Aeroengine Materials (ADAM) - Next Generation Single Crystal and Lifing Methodologies | (P) |
| GR/S42859/01 | Exploratory proposal to grow and characterise gallium nitride on silicon | (P) |
| GR/R99713/01 | Engineering Doctorate Centre: Engineered Metals for High Performance Applications in Aerospace and Related Technologies | (C) |
| GR/R42276/01 | High resolution high angle annular dark field imaging of materials with structural modulations | (P) |
| GR/R03341/01 | 010700 | (P) |
| GR/M89669/01 | THE DEVELOPMENT OF IMPROVED MOCVD GROWTH TECHNIQUES FOR GALLIUM NITRIDE LAYERS AND DEVICE HETEROSTRUCTURES | (C) |
| GR/N06489/01 | THE DEVELOPMENT OF FOCUSED ION BEAM NANOFABRICATION FOR MATERIALS CHARACTERISATION AND DEVICE PROCESSING | (C) |
| GR/M89263/01 | THE DEVELOPMENT OF IMPROVED MOCVD GROWTH TECHNIQUES FOR GALLIUM NITRIDE LAYERS AND DEVICE HETEROSTRUCTURES | (P) |
| GR/M76232/01 | IMPROVEMENTS IN PLASMA SPRAYED THERMAL BARRIER COATINGS FOR USE IN ADVANCED GAS TURBINES | (C) |
| GR/L22867/01 | OPTIMISATION OF BLUE LIGHT EMITTING DEVICE STRUCTURES | (P) |
| GR/K84400/01 | DESIGNING MATERIALS FOR AEROSPACE AND POWER PLANT: A REVOLUTIONARY COMPUTER MODELLING APPROACH | (P) |
| GR/L21686/01 | NANOSCALE ENERGY RESOLVED ELECTRON IMAGING AND ANALYSIS | (P) |
| GR/L21044/01 | THE DEVELOPMENT AND APPLICATION OF FOCUSED ION BEAM FABRICATION AND SCANNING ION MICROSCOPY | (C) |
| GR/K89276/01 | A NEW APPROACH TO SOLVING THE PHASE PROBLEM USING ELECTRON DIFFRACTION | (P) |
| GR/K76580/01 | THE USE OF FIELD EMISSION GUN SEM FOR THE GENERATION OF MICROSTRUCTURAL DATA FOR MODELLING STUDIES | (C) |
| GR/K34610/01 | ROPA: UNDERSTANDING BONDING AND DOPING IN SOME KEY METALLIC ALLOYS | (P) |
| GR/J37584/01 | ADVANCED MOLECULAR, MICROSTRUCTURAL AND STRUCTURAL ANALYSIS THROUGH INTEGRATED NETWORKED COMPUTING | (C) |
| GR/J30738/01 | QUANTITIVE TEM METHODS IN MATERIALS SCIENCE BASED ON ENERGY FILTERING | (P) |
| GR/J37591/01 | FABRICATION AND IN-SITU ELECTRICAL AND STRUCTURAL CHARACTERISATION OF NANOSCALE ELECTRONIC DEVICES | (P) |
| GR/J37966/01 | CORRELATION OF STRUCTURAL AND ELECTRICAL PROPERTIES OF DEFECTS WITHIN MBE GROWN SIGE/SI | (P) |
| GR/H05258/01 | ULTIMATE LIMITS OF NANOFABRICATION IN SEMICONDUCTORS | (P) |
| GR/H38898/01 | METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE) GROWTH OF 3-5 SEMICONDUCTORS | (P) |
| GR/G33035/01 | NANOMETRIC DEVICES FOR BIOLOGICAL APPLICATIONS. | (P) |
| GR/G37699/01 | NANOMETRE-SCALE ELECTRON BEAM LITHOGRAPHY AND MICROANALYSIS OF LOW DIMENSIONAL STRUCTURES | (P) |
| GR/F96853/01 | METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE) GROWTH OF3-5 SEMICONDUCTORS | (C) |
| GR/G16809/01 | NANOMETRE-SCALE ELECTRON BEAM LITHOGRAPHY MECHANISMS AND APPLICATIONS | (P) |
| GR/F88001/01 | ATOMIC STRUCTURES OF DEFECTS AND INTERFACES IN SEMICONDUCTORS SUPERCONDUCTORS LDS AND OTHER MATERIALS | (P) |
| GR/E98522/01 | LASER-ASSISTED METAL ORGANIC MOLECULAR BEAM EPITAXY OF III-V SEMICONDUCTORS | (C) |
| GR/E79958/01 | GRAIN BOUNDARY STRUCTURES IN HIGH TC SUPERCONDUCTING CERAMICS | (C) |
| GR/D65787/01 | NANOMETRE-SCALE ELECTRON BEAM LITHOGRAPHY AND MICROANALYSIS OF LOW DIMENSIONAL STRUCTURE | (P) |