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Researcher Details
 
Name: Professor Sir C Humphreys
Organisation: Queen Mary University of London
Department: School of Engineering & Materials Scienc
Current EPSRC-Supported Research Topics:
Electronic Devices & Subsys. Materials Characterisation
Materials Synthesis & Growth Microsystems
Optoelect. Devices & Circuits Quantum Optics & Information
RF & Microwave Technology

Current EPSRC Support
EP/P00945X/1 Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs(C)
EP/N017927/1 Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates(P)
EP/M010589/1 Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal)(P)
Previous EPSRC Support
EP/K008323/1 Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.(C)
EP/K014471/1 Silicon Compatible GaN Power Electronics(C)
EP/J003603/1 Study of semi-polar and non-polar nitride based structures for opto-electronic device applications(C)
EP/I012591/1 Lighting the Future(P)
EP/H019324/1 Nitrides for the 21st century(P)
EP/G042330/1 Science Bridge Award USA: Harnessing Materials for Energy(P)
TS/G001383/1 LED Lighting for the 21st Century(P)
EP/F018614/1 Defect reduction in GaN using the in-situ growth of transition metal nitride layers(P)
EP/E029892/1 Quantitative, high resolution two-and-three dimensional dopant mapping in the Scanning Electron Microscope by Secondary Electron Spectro-Micro(P)
EP/E012477/1 An Advanced SEM-FIB Dual Beam Microscope for Three-Dimensional Mesoscale Fabrication, Imaging and Analysis(C)
EP/E035167/1 Materials Challenges in GaN-based Light Emitting Structures(P)
EP/E031625/1 Optimising GaN light emitting structures on free-standing GaN substrates(P)
EP/C532171/1 Tomographic Diffractive Imaging(P)
GR/S28150/01 Gallium Nitride LEDs for Display Applications(P)
GR/S80059/01 Engineering Metals for High Performance Applications in Aerospace and Related Technologies(C)
GR/S57914/01 Advanced Optical Functionality in GaN based Optical Components(C)
GR/S49391/01 Next Generation GaN-based Materials(P)
GR/S26156/01 DARP: Advanced Aeroengine Materials (ADAM) - Next Generation Single Crystal and Lifing Methodologies(P)
GR/S42859/01 Exploratory proposal to grow and characterise gallium nitride on silicon(P)
GR/R99713/01 Engineering Doctorate Centre: Engineered Metals for High Performance Applications in Aerospace and Related Technologies(C)
GR/R42276/01 High resolution high angle annular dark field imaging of materials with structural modulations(P)
GR/R03341/01 010700(P)
GR/M89669/01 THE DEVELOPMENT OF IMPROVED MOCVD GROWTH TECHNIQUES FOR GALLIUM NITRIDE LAYERS AND DEVICE HETEROSTRUCTURES(C)
GR/N06489/01 THE DEVELOPMENT OF FOCUSED ION BEAM NANOFABRICATION FOR MATERIALS CHARACTERISATION AND DEVICE PROCESSING(C)
GR/M89263/01 THE DEVELOPMENT OF IMPROVED MOCVD GROWTH TECHNIQUES FOR GALLIUM NITRIDE LAYERS AND DEVICE HETEROSTRUCTURES(P)
GR/M76232/01 IMPROVEMENTS IN PLASMA SPRAYED THERMAL BARRIER COATINGS FOR USE IN ADVANCED GAS TURBINES(C)
GR/L22867/01 OPTIMISATION OF BLUE LIGHT EMITTING DEVICE STRUCTURES(P)
GR/K84400/01 DESIGNING MATERIALS FOR AEROSPACE AND POWER PLANT: A REVOLUTIONARY COMPUTER MODELLING APPROACH(P)
GR/L21686/01 NANOSCALE ENERGY RESOLVED ELECTRON IMAGING AND ANALYSIS(P)
GR/L21044/01 THE DEVELOPMENT AND APPLICATION OF FOCUSED ION BEAM FABRICATION AND SCANNING ION MICROSCOPY(C)
GR/K89276/01 A NEW APPROACH TO SOLVING THE PHASE PROBLEM USING ELECTRON DIFFRACTION(P)
GR/K76580/01 THE USE OF FIELD EMISSION GUN SEM FOR THE GENERATION OF MICROSTRUCTURAL DATA FOR MODELLING STUDIES(C)
GR/K34610/01 ROPA: UNDERSTANDING BONDING AND DOPING IN SOME KEY METALLIC ALLOYS(P)
GR/J37584/01 ADVANCED MOLECULAR, MICROSTRUCTURAL AND STRUCTURAL ANALYSIS THROUGH INTEGRATED NETWORKED COMPUTING(C)
GR/J30738/01 QUANTITIVE TEM METHODS IN MATERIALS SCIENCE BASED ON ENERGY FILTERING(P)
GR/J37591/01 FABRICATION AND IN-SITU ELECTRICAL AND STRUCTURAL CHARACTERISATION OF NANOSCALE ELECTRONIC DEVICES(P)
GR/J37966/01 CORRELATION OF STRUCTURAL AND ELECTRICAL PROPERTIES OF DEFECTS WITHIN MBE GROWN SIGE/SI(P)
GR/H05258/01 ULTIMATE LIMITS OF NANOFABRICATION IN SEMICONDUCTORS(P)
GR/H38898/01 METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE) GROWTH OF 3-5 SEMICONDUCTORS(P)
GR/G33035/01 NANOMETRIC DEVICES FOR BIOLOGICAL APPLICATIONS.(P)
GR/G37699/01 NANOMETRE-SCALE ELECTRON BEAM LITHOGRAPHY AND MICROANALYSIS OF LOW DIMENSIONAL STRUCTURES(P)
GR/F96853/01 METAL ORGANIC MOLECULAR BEAM EPITAXY (MOMBE) GROWTH OF3-5 SEMICONDUCTORS(C)
GR/G16809/01 NANOMETRE-SCALE ELECTRON BEAM LITHOGRAPHY MECHANISMS AND APPLICATIONS(P)
GR/F88001/01 ATOMIC STRUCTURES OF DEFECTS AND INTERFACES IN SEMICONDUCTORS SUPERCONDUCTORS LDS AND OTHER MATERIALS(P)
GR/E98522/01 LASER-ASSISTED METAL ORGANIC MOLECULAR BEAM EPITAXY OF III-V SEMICONDUCTORS(C)
GR/E79958/01 GRAIN BOUNDARY STRUCTURES IN HIGH TC SUPERCONDUCTING CERAMICS(C)
GR/D65787/01 NANOMETRE-SCALE ELECTRON BEAM LITHOGRAPHY AND MICROANALYSIS OF LOW DIMENSIONAL STRUCTURE(P)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator