| EPSRC Reference: |
GR/L05570/01 |
| Title: |
ELECTRONIC STRUCTURE AND LASER CHARACTERISTICS OF NITROGEN BASED III-V SEMICONDUCTORS |
| Principal Investigator: |
Abram, Professor R |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
Durham, University of |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 January 1997 |
Ends: |
31 December 1998 |
Value (£): |
80,413
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| EPSRC Research Topic Classifications: |
| Materials Characterisation |
Optoelect. Devices & Circuits |
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| EPSRC Industrial Sector Classifications: |
| Manufacturing |
Electronics |
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| Panel History: |
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Summary on Grant Application Form |
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This joint proposal from the Departments of Physics at Durham and Cardiff combines their respective expertise in the calculation of the electronic structure, electrical and optical properties of semiconductors and in the modelling of quantum well lasers, to produce data of direct relevance to the development of nitride-based materials and devices. Virtual crystal and supercell calculations of compound and alloy band structures will provide the basis for calculations of k.p. parameters, heterojunction offsets, carrier transport properties and dielectric properties for predictions of optical gain and recombination spectra incorporating Coulomb enhancement and spectral broadening by dephasing and well width fluctuations. We will produce data for model gain as a function of recombination current, and will calculate carrier leakage currents to devise optimised laser structures. Particular attention will be given to both cubic and wurtzite structures and the modelling of structures compatible with available substrates. These calculations will be tested by comparison with experimental optical absorption spectra made available from related work. Close links have already been established with related materials work, which will benefit immediately from these data. The data on electronic structure and dielectric properties is of wide applicability and of particular relevance to high temperature electronics.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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