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| Name: |
Professor R Abram |
| Organisation: |
Durham, University of |
| Department: |
Physics |
| Current EPSRC-Supported Research
Topics: |
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| Current EPSRC Support |
| There is no current EPSRC Support |
| Previous EPSRC Support |
| EP/P504686/1 | DTA - Durham University | (C) |
| EP/P503345/1 | DTA - Durham University | (C) |
| EP/P502438/1 | DTA - Durham University | (C) |
| EP/P50175X/1 | DTA - University of Durham | (C) |
| EP/C534263/1 | ARTIFICIAL MATERIALS FOR TERAHERTZ FREQUENCY APPLICATIONS | (C) |
| EP/P500184/1 | DTA - University of Durham | (C) |
| GR/P02851/01 | DTA - University of Durham | (C) |
| GR/P03636/01 | Ind. CASE - University of Durham | (C) |
| GR/P01434/01 | DTA - University of Durham | (C) |
| GR/R66289/01 | Interaction of zero-dimensional electronic and photonic states in semiconductor nanostructures | (P) |
| GR/R56716/01 | First principles calculations of the electronic and optical properties of PPV | (C) |
| GR/R25859/01 | Theoretical Studies of Nitride Surface and growth properties | (C) |
| GR/P00864/01 | DTA - University of Durham | (C) |
| GR/L73159/01 | NOVEL PHOTONIC MICROSTRUCTURES IN SEMICONDUCTORS | (P) |
| GR/L04405/01 | THEORY OF SILICON-GERMANIUM QUANTUM DEVICES | (P) |
| GR/L05570/01 | ELECTRONIC STRUCTURE AND LASER CHARACTERISTICS OF NITROGEN BASED III-V SEMICONDUCTORS | (P) |
| GR/J10495/01 | MODELLING OF HIGH SPEED SEMICONDUCTOR LASERS | (P) |
| GR/J41642/01 | MODELLING OF HEMTS AND MESFETS | (P) |
| GR/H45094/01 | MODELLING OF HETEROJUNCTION BIPOLAR TRANSISTORS | (P) |
| GR/F55300/01 | CALCULATIONS OF IMPACT IONIZATION IN SEMICONDUCTORS AND SUPERLATTICES | (P) |
| GR/F65590/01 | MONTE CARLO MODELLING OF PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS | (P) |
| GR/F30314/01 | MODELLING OF HETEROJUNCTION BIPOLAR TRANSISTORS | (P) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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