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Details of Grant 

EPSRC Reference: GR/K79581/01
Title: WIDE BAND GAP ALGAINP: MATERIAL STUDIES AND SHORT WAVELENGTH NOVEL LIGHT EMITTERS
Principal Investigator: Mowbray, Professor D
Other Investigators:
Cockburn, Professor J Hill, Dr G Skolnick, Professor M
Houston, Professor P Whittaker, Dr D Fisher, Dr T
Whittaker, Professor DM
Researcher Co-Investigators:
Project Partners:
IQE (Europe) Ltd P R P Optoelectronics Ltd
Department: Physics and Astronomy
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 15 March 1996 Ends: 14 March 1999 Value (£): 234,466
EPSRC Research Topic Classifications:
Materials Characterisation Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Manufacturing
Related Grants:
Panel History:  
Summary on Grant Application Form
The aim of the proposal is the development of high efficiency, short wavelength novel light emitters based on the GaInP-AlGaInP material system. This system represents the largest, high quantum efficiency direct band gap semiconductor which can be grown lattice matched to GaAs. It is hence the favoured system for red-green light emitters. Four different light emitting diode (LED) structures will be studied to determine which offers the optimum design in terms of ease of fabrication and light production efficiency. Visible LEDs grown within resonant cavities will be fabricated and studied. Such devices should offer reduced emission linewidths and increased peak emission intensities compared to conventional LEDs. The use of ordered GaInP active regions in visible vertical cavity surface emitting lasers to control the polarisation of the emitted light will be investigated. Finally, materials problems associated with the AlGaInP system will be studied. These will include studies of non-radiative deep centres using the technique of deep level transient spectroscopy (DLTS) and methods of obtaining higher and more repeatable levels of p-type doping.
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Organisation Website: http://www.shef.ac.uk