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Researcher Details
 
Name: Professor D Mowbray
Organisation: University of Sheffield
Department: Physics and Astronomy
Current EPSRC-Supported Research Topics:
Materials Synthesis & Growth Quantum Optics & Information

Current EPSRC Support
EP/R029253/1 Fibre Wavelength Quantum Networks (FQNet)(C)
EP/P000967/1 GaAsP-GaAs nanowire quantum dots for novel quantum emitters(P)
Previous EPSRC Support
EP/J012882/1 Silicon based QD light sources and lasers(P)
EP/K004220/1 GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology(C)
EP/G001642/1 Optical Control of Quantum States in Semiconductor Nanostructures(C)
EP/E03344X/1 Research Physicists Encouraging Outreach into Primary Schools(C)
EP/D015782/1 Spectroscopy and Applications of Nitride Quantum Dots(P)
EP/C531779/1 Research Physicists Supporting Primary Science(C)
GR/T09408/01 Quantum Cryptography Using Quantum Dot Single Photon Emitters(C)
GR/S76076/01 PROGRAMME GRANT: Control of light-matter interactions in advanced semiconductor nanostructures(C)
GR/S49308/01 Long wavelength GaAs-based QD Lasers.(P)
GR/S09838/01 New Polariton Phenomena in Semiconductor Microcavities(C)
GR/R15191/01 Stimulates Emission and Lasing Processes In Inga(Ai)N Quantum Well Heterostructures(C)
GR/N20997/01 STUDIES OF FUNDAMENTAL PHYSICAL PROCESSES IN INAS-(AL) GAAS SELF-ASSEMBLED QUANTUM DOTS(P)
GR/N23516/01 GAINP/ALGAINP QUANTUM DOT LASERS(C)
GR/M72951/01 ELECTROMAGNETIC PROPERTIES, BAND STRUCTURES AND LIGHT- MATTER INTERACTIONS IN SEMICONDUCTOR PHOTONIC CRYSTAL(C)
GR/N05178/01 MID INFRA RED APPLICATIONS FOR SEMICONDUCTOR QUANTUM DOTS(C)
GR/M22529/01 FEMTOSECOND DYNAMICS IN NOVEL ORGANIC AND INORGANIC SEMICONDUCTORS(C)
GR/L95489/01 TRANSVERSE AND VERTICAL CAVITY QUANTUM DOT LASERS(P)
GR/L78017/01 MAGNETO-OPTICAL STUDIES OF SINGLE SEMICONDUCTOR QUANTUM DOTS(P)
GR/L23178/01 HIGH EFFICIENCY GREEN LEDS FOR LARGE AREA FULL COLOUR DISPLAYS (GLLAD)(P)
GR/L32187/01 NOVEL PHENOMENA IN SEMICONDUCTOR QUANTUM MICROCAVITIES(C)
GR/L28821/01 OPTO-ELECTRONIC INVESTIGATIONS OF SEMICONDUCTOR QUANTUM DOTS AND QUANTUM WIRES.(C)
GR/L11984/01 OPTOELECTRONIC DEVICES IN PIEZOELECTRIC, STRAINED LAYER III-V QUANTUM WELL STRUCTURES GROWN ON (111) B'(C)
GR/K79581/01 WIDE BAND GAP ALGAINP: MATERIAL STUDIES AND SHORT WAVELENGTH NOVEL LIGHT EMITTERS(P)
GR/K79871/01 LEVEL POPULATIONS, POPULATION INVERSION AND BALLISTIC TRANSPORT IN SEMICONDUCTORTUNNELLING STRUCTURES(C)
GR/J93894/01 MOVPE GROWTH, CHARACTERIZATION, PHYSICS AND DEVICES OF GAN AND RELATED MATERIALS(C)
GR/J08652/01 MOVPE GROWTH OF QUANTUM WIRE STRUCTURES ON NON-PLANER SUBSTRATES(C)
GR/H70270/01 INVESTIGATIONS OF THE ELECTRONIC PROPERTIES OF GAINP, ALGAINP AND RELATED HETEROJUNCTION SYSTEMS.(C)
GR/H33947/01 ANGLO-JAPANESE COLLABORATION(C)
GR/H45773/01 PIEZOELECTRIC STRAINED LAYER QUANTUM WELLS FOR OPTOELECTRONIC DEVICES(C)
GR/H07108/01 HIGH PRESSURE STUDIES OF ADVANCED ELECTRONIC MATERIALS(C)
GR/H08082/01 OPTO-ELECTRONIC INVESTIGATIONS OF LOW DIMENSIONAL STRUCTURES AND DEVICES(C)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator