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Researcher Details
 
Name: Professor P Houston
Organisation: University of Sheffield
Department: Electronic and Electrical Engineering
Current EPSRC-Supported Research Topics:
Electronic Devices & Subsys. Materials Characterisation
Materials Synthesis & Growth RF & Microwave Technology

Current EPSRC Support
NS/A000054/1 EPSRC National Epitaxy Facility(P)
EP/N015878/1 Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates(P)
Previous EPSRC Support
EP/K014471/1 Silicon Compatible GaN Power Electronics(C)
NS/A000013/1 EPSRC National Centre for III-V Technologies(P)
EP/E05644X/1 InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission(P)
EP/D505712/1 Support for the EPSRC National Centre for III-V Technologies at Sheffield(P)
GR/S85733/01 Basic Technology: M-I3 - Multidimensional Integrated Intelligent Imaging(C)
GR/R65534/01 Support for the EPSRC Central Facility for III-V Materials at Sheffield(P)
GR/R65626/01 Focused Ion Beam Machining and Deposition Applications to Functional and Structural Materials Research(R)
GR/R34035/01 InP Travelling-Wave HPTs for Ultra High Frequency Photonic Systems(P)
GR/N23516/01 GAINP/ALGAINP QUANTUM DOT LASERS(P)
GR/M11509/01 SUPPORT FOR THE EPSRC CENTRAL FACILITY FOR 111-V MATERIALS AT SHEFFIELD(C)
GR/L28821/01 OPTO-ELECTRONIC INVESTIGATIONS OF SEMICONDUCTOR QUANTUM DOTS AND QUANTUM WIRES.(C)
GR/L11984/01 OPTOELECTRONIC DEVICES IN PIEZOELECTRIC, STRAINED LAYER III-V QUANTUM WELL STRUCTURES GROWN ON (111) B'(C)
GR/K79581/01 WIDE BAND GAP ALGAINP: MATERIAL STUDIES AND SHORT WAVELENGTH NOVEL LIGHT EMITTERS(C)
GR/K58883/01 INGAALP/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH POWER AND HIGH FREQUENCY APPLICATIONS(P)
GR/K64105/01 SUPPORT FOR THE SHEFFIELD CENTRAL FACILITY FOR III - V SEMICONDUCTORS(C)
GR/J93894/01 MOVPE GROWTH, CHARACTERIZATION, PHYSICS AND DEVICES OF GAN AND RELATED MATERIALS(C)
GR/J21699/01 SUPPORT FOR THE SHEFFIELD CENTRAL FACILITY FOR III-V SEMICONDUCTORS(C)
GR/J08652/01 MOVPE GROWTH OF QUANTUM WIRE STRUCTURES ON NON-PLANER SUBSTRATES(C)
GR/H61896/01 HOT ELECTRON TRANSPORT IN INP/INGAAS HETEROJUNCTION BIPOLAR TRANSISTORS(P)
GR/H70270/01 INVESTIGATIONS OF THE ELECTRONIC PROPERTIES OF GAINP, ALGAINP AND RELATED HETEROJUNCTION SYSTEMS.(C)
GR/H45773/01 PIEZOELECTRIC STRAINED LAYER QUANTUM WELLS FOR OPTOELECTRONIC DEVICES(C)
GR/H08082/01 OPTO-ELECTRONIC INVESTIGATIONS OF LOW DIMENSIONAL STRUCTURES AND DEVICES(C)
GR/G59356/01 SUPPORT FOR THE SHEFFIELD CENTRAL FACILITY FOR III-V SEMICONDUCTORS(C)
GR/G27065/01 EXTENDED SUPPORT OF THE SHEFFIELD CENTRALFACILITY FOR III-V SEMICONDUCTORS(C)
GR/F30284/01 NOVEL HIGH SPEED INTEGRATED INJECTION LOGIC IN INP/INGAAS(P)
GR/F42669/01 CAPITAL ITEMS REQUIRED FOR SHEFFIELD CENTRAL FACILITY(C)
GR/E41177/01 SUPPORT AND DEVELOPMENT OF THE SHEFFIELD III-V CENTRAL FACILITY(C)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator