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Details of Grant 

EPSRC Reference: GR/J97540/01
Title: IRC FOR THE STUDY OF THE GROWTH, CHARACTERISATION AND APPLICATION OF SEMICONDUCTOR MATERIALS
Principal Investigator: Joyce, Professor BA
Other Investigators:
Stradling, Professor S Newman, Professor R Whitehouse, Professor CR
Vvedensky, Professor D Parry, Professor G Harris, Dr J
Researcher Co-Investigators:
Project Partners:
Department: Electronic Materials & Devices (IRC)
Organisation: Imperial College London
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 1994 Ends: 31 March 1996 Value (£): 6,484,600
EPSRC Research Topic Classifications:
Condensed Matter Physics Electronic Devices & Subsys.
Materials Characterisation Materials Processing
Materials Synthesis & Growth Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Following the revised strategy requirements, our programme is now organised in three vertically integrated themes; III-V optical devices, III-V transport devices and Si and SiGe alloys. MBE and MOCVD growth studies, work on dopant incorporation and characterisation all form parts of the projects covered by these broad headings. Some projects are strongly device-led, while others involve exploratory growth work with a more speculative device pull. Our selection of device-oriented work has been influenced strongly by UK industrial interests and consequently our III-V activities are biased towards optoelectronics. Our silicon work is strongly materials oriented, since we are relying mainly on groups outside the IRC to provide the necessary device pull.
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Organisation Website: http://www.imperial.ac.uk