Name:	Professor BA Joyce
Organisation:	Imperial College London
Department:	Electronic Materials & Devices (IRC)
Current EPSRC-Supported Research Topics:

Current EPSRC Support

There is no current EPSRC Support

Previous EPSRC Support

GR/L77140/01 ERBIUM-DOPED SILICON-GERMANIUM LASER STRUCTURES (C) GR/M15132/01 SIZE AND COMPOSITION OF SEMICONDUCTOR NANOSTRUCTURES USING SCANNING TRANSMISSION ELECTRON MICROSCOPY (P) GR/M13985/01 IN-PLANE AND VERTICAL CAVITY QUANTUM DOT LASERS (C) GR/M16559/01 OPTICAL EMISSION FROM SEMICONDUCTOR MICROCAVITIES (C) GR/L77119/01 ERBIUM-DOPED SILICON: GERMANIUM LASER STRUCTURES (C) GR/L53724/01 SIGE FOR MOS TECHNOLOGIES (C) GR/L48447/01 A SIGE ON INSULATOR TECHNOLOGY FOR HIGH SPEED, LOW POWER MOBILE COMMUNICATIONS APPLICATIONS (C) GR/L24502/01 SUB-MICRON OPTICAL LITHOGRAPHY AT IMPERIAL COLLEGE (C) GR/L31197/01 IN-SITU STUDY OF SI-SIGE FILM GROWTH DURING GAS SOURCE MBE (P) GR/K96977/01 INTERDISCIPLINARY RESEARCH CENTRE FOR SEMICONDUCTOR MATERIALS 1996-1999 (P) GR/K54915/01 SIMULATION AND OPTIMISATION OF SIGE FETS FOR HIGH SPEED VLSI APPLICATIONS (C) GR/J97540/01 IRC FOR THE STUDY OF THE GROWTH, CHARACTERISATION AND APPLICATION OF SEMICONDUCTOR MATERIALS (P) GR/H18777/01 UNIVERSITY OF LONDON SEMICONDUCTOR MATERIALS IRC TWO YEAR RESOURCE REVIEW (P) GR/H20855/01 STM INVESTIGATION OF ADSORPTION ON MBE-GROWN SURFACES OF 3-5 COMPOUNDS (P) GR/H21753/01 UNIVERSITY OF LONDON SEMICONDUCTOR MATERIALS IRC OVERHEAD ELEMENT 1 APRIL 1991 TO 31 JULY 1992 (P) GR/F98147/01 LOW TEMPERATURE GROWTH OF SILICON FILMS FROM MOLECULAR BEAMS OF SILANE OR DISLANE (C) GR/G34537/01 ATOMIC ORDERING IN TERNARY 3-5 SEMICONDUCTOR ALLOYS RELATED TO SURFACE STRUCTURE DURING EPITAXIAL GROWTH (P) GR/F42393/01 DYNAMIC SIMS FOR MATERIALS RESEARCH AT IMPERIAL COLLEGE (C) GR/E85461/01 LONDON UNIVERSITY RESEARCH CENTRE IN SEMICONDUCTOR GROWTH CHARACTERISATION AND PROCESSING (P)

Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator