| EPSRC Reference: |
GR/J41642/01 |
| Title: |
MODELLING OF HEMTS AND MESFETS |
| Principal Investigator: |
Abram, Professor R |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
Durham, University of |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 November 1993 |
Ends: |
31 October 1996 |
Value (£): |
122,459
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
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Summary on Grant Application Form |
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To develop two-dimensional, self-consistent, Monte Carlo based simulations of HEMTs and MESFETs that include:(i) the gate recess,(ii) the true structure of the source and drain electrodes, and(iii) surface states.To apply the simulation to study state of the art HEMTs and the new generation of the high performance GaAs MESFETs.Progress:A suite of software called Software Library for Universal Random Particle Simulator (SLURPS) has been developed in collaboration with workers supported by grants GR/H45094 and GR/J10495. This software library is an extremely versatile tool which can be used to simulate a large number of devices with different materials, structures and geometries, with no extra programming.Previous work on MESFETs carried out at Durham has been extended to include a gate recess in the structure. The model allows for a trapezium-shaped recess including the limit of a rectangular recess. The software was tested on a recessed gate structure of a standard MESFET. Currently ion implanted devices grown by Feng & Laskar [1] with gate lengths of 0.25 mm and 0.15 mm are being simulated. IDS/VDS characteristics have been obtained for both devices and a IDS/VGS characteristic for the 0.25 mm gate device is being calculated in order to determine a pinch-off voltage under typical operating conditions. In the near future the problem of surface states will be addressed and some time will be spent speeding up the SLURPS routines. In the medium term the software will be used to simulate other structures of interest including delta-doped MESFETs and InP based HEMTs. [1] M. Feng and J. Laskar, IEEE Transactions on Electron Devices, 40, 9 (1993).
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Key Findings |
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Potential use in non-academic contexts |
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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