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Details of Grant 

EPSRC Reference: GR/J10495/01
Title: MODELLING OF HIGH SPEED SEMICONDUCTOR LASERS
Principal Investigator: Abram, Professor R
Other Investigators:
Brand, Dr S
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: Durham, University of
Scheme: Standard Research (Pre-FEC)
Starts: 01 November 1993 Ends: 31 October 1996 Value (£): 115,386
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
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Summary on Grant Application Form
To develop a model based on Monte Carlo simulation of carrier transport and capture/emission in QW lasers, including VCSELs. To use the simulation in conjunction with rate equation models to investigate the limitations imposed on the modulation bandwidth of the devices by carrier transport effects. To study the damping of the frequency response due to non-linear gain derived from spectral hole burning and carrier heating.Progress:The first year of the research project has seen the completion of a model to describe the capture efficiency of electrons and holes into a quantum well, which uses realistic k.p band-structure to describe mixing between bands [1,2]. It is intended that this model will be used to provide data for a quantum mechanical description of carrier capture in the laser simulation at a further stage in the project.A Monte Carlo simulation of a single quantum well laser is being developed. This is based on Monte Carlo subroutines previously developed at Durham by M. Walmsley and R. A. Abram, and uses a basic scheme for carrier recombination in the well. Preliminary results suggest that hole transport across the confinement region (SCH) may be important in limiting the device speed, but much further simulation for a range of SCH geometries is necessary before any conclusion can be reached.The intended developments in the immediate future are: (1) refine the relaxation time scheme for capture and stimulated recombination,(2) test the laser response to a simulated modulating signal.References: (1) G.C. Crow and R.A. Abram, 1994, Superlattices and Microstructures , 15, 127.(2) G.C. Crow and R.A. Abram, 1995, paper submitted to Semiconductor Science and Technology entitled A k.p model for carrier capture into a quantum well .
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