EPSRC logo

Details of Grant 

EPSRC Reference: GR/S76182/01
Title: Thermal Imaging of Active AIGaN/GaN Field Effect Transistors Using Micro-Raman Spectroscopy
Principal Investigator: Kuball, Professor M
Other Investigators:
Researcher Co-Investigators:
Project Partners:
QinetiQ Quantum Focus Instruments Corporation Renishaw
Department: Physics
Organisation: University of Bristol
Scheme: Standard Research (Pre-FEC)
Starts: 19 March 2004 Ends: 18 March 2007 Value (£): 370,268
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Performance and reliability of semiconductor devices are strongly affected by self-heating, i.e., temperature rises induced by ohmic heat generation. This is of increasing importance considering the ever-decreasing device dimensions. Mapping of temperature in the active area of a semiconductor device is therefore one important aspect of tackling to improve device reliability and to optimise device design and performance. However, direct measurement of this temperature is not readily achieved. Infrared (IR) techniques that have so far been employed to measure active device temperatures have diffraction limited spatial resolutions of only 10-1 5pm. When compared with the often only micron/sub-micron size active device dimensions, this is not sufficient, resulting in an underestimation of potential risks for device failure. Alternative non-invasive temperature measurement techniques with better spatial resolution are therefore urgently needed. The here developed Raman/IR thermal imaging system will provide non-invasive fast device temperature measurements with spatial resolutions on the micron/sub-micron scale. Using the developed system failure / reliability studies will be performed on AIGaN/GaN HFETs. Although performance of AIGaN/GaN HFETs, currently being developed for radars, mobile communication base stations and space communication. is at present at an acceptable level. device reliability still presents a major challenge preventing real-life applications.
Key Findings
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Potential use in non-academic contexts
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Impacts
Description This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Summary
Date Materialised
Sectors submitted by the Researcher
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
Project URL: http://spectra.phy.bris.ac.uk
Further Information:  
Organisation Website: http://www.bris.ac.uk