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| Name: |
Professor M Kuball |
| Organisation: |
University of Bristol |
| Department: |
Physics |
| Current EPSRC-Supported Research
Topics: |
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Analytical Science
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Electric Motor & Drive Systems
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Electronic Devices & Subsys.
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Materials Characterisation
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Materials Synthesis & Growth
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Microsystems
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RF & Microwave Technology
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| Current EPSRC Support |
| EP/X035360/1 | Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN) | (P) |
| EP/Z531091/1 | Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE) | (P) |
| EP/W035359/1 | Next generation Acoustic Wave Filter Platform | (C) |
| EP/W034751/1 | Boron-based semiconductors - the next generation of high thermal conductivity materials | (P) |
| EP/X012123/1 | ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications | (P) |
| EP/V057626/1 | FINER: Future thermal Imaging with Nanometre Enhanced Resolution | (P) |
| EP/V005286/1 | Guiding, Localizing and IMaging confined GHz acoustic waves in GaN Elastic waveguides and Resonators for monolithically integrated RF front-ends | (C) |
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| Previous EPSRC Support |
| EP/X015882/1 | Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics | (P) |
| EP/R029393/1 | Materials and Devices for Next Generation Internet (MANGI) | (P) |
| EP/R022739/1 | Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices | (P) |
| EP/P013562/1 | Quantitative non-destructive nanoscale characterisation of advanced materials | (P) |
| EP/P00945X/1 | Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs | (P) |
| EP/N031563/1 | High Performance Buffers for RF GaN Electronics | (P) |
| EP/K026232/1 | GaN Electronics: RF Reliability and Degradation Mechanisms | (P) |
| EP/K024345/1 | Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation | (P) |
| EP/L007010/1 | Underpinning Power Electronics 2012: Devices Theme | (C) |
| EP/K014471/1 | Silicon Compatible GaN Power Electronics | (C) |
| EP/I033165/1 | Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms | (P) |
| EP/H037853/1 | Development of an integrated optical E-Probe for GaN power transistor reliability analysis | (P) |
| EP/H011366/1 | Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes | (P) |
| EP/F033826/1 | Fabrication of first 337 nm laser diodes for biological applications | (P) |
| EP/D075033/1 | NSF: An investigation into the properties of B12As2, B4C and their heterostructures | (P) |
| EP/D045304/1 | Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors | (P) |
| EP/C523687/1 | A Dynamic Holographic Assembler | (C) |
| GR/S76182/01 | Thermal Imaging of Active AIGaN/GaN Field Effect Transistors Using Micro-Raman Spectroscopy | (P) |
| GR/R02207/01 | High Temperature Annealing of Gan and Algan Monitored By Raman Scattering | (P) |
| GR/M37318/01 | NITRIDE BASED LASER DIODES AND VCSELS | (C) |
| GR/M15590/01 | ELECTRIC-FIELD INDUCED RAMAN SCATTERING (EFIRS) ON III-V NITRIDE BASED DEVICES | (P) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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