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Details of Grant 

EPSRC Reference: GR/R42511/01
Title: Atmospheric Pressure Chemical Vapour Deposition as a Silicon Microfabrication-Compatible Route to Deposition of Gas Sensor Materials
Principal Investigator: Williams, Professor D
Other Investigators:
Parkin, Professor IP
Researcher Co-Investigators:
Project Partners:
Capteur Sensors & Analysers Ltd
Department: Chemistry
Organisation: UCL
Scheme: Standard Research (Pre-FEC)
Starts: 01 September 2001 Ends: 30 September 2004 Value (£): 198,976
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal is for work to develop a microfabrication-compatible route to the new gas sensor materials which have been developed by DEW. These materials have been commercialised through screen printing of ceramic powders, and are redefining the field of semiconductor-based gas sensors in terms of the stability, reliability and selectivity which they offer. The proposed work will open the possibility of fabricating ultra-low power sensor arrays and integrated instruments using these new materials. It is our contention that APCVD is an ideal way to address this problem, and is also compatible with high-volume industrial manufacture. APCVD has the advantage of fast growth rates obtainable in a small, simple reactor vessel. The objective of the proposed research is to prove the conjecture, using CTO (titanium-substituted chromium oxide Cr(2-x)Ti(x)O(3), x < 0.4; typically x = 0.95) and WO(3) as the examples, by first demonstrating the general principles which must underpin the application of APCVD to make multi-component, nano-porous films with stable and repeatable microstructure; and then by applying these methods to make prototype sensors incorporating CTO and W03. The fabricated sensors would be exhaustively tested for reliability, repeatability and stability in comparison to devices fabricated using conventional methods.
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