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Details of Grant 

EPSRC Reference: GR/R20816/01
Title: Mocvd Grown Tunnel Junction Contacts Onto Cdte Photovoltaics
Principal Investigator: Irvine, Professor SJC
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Antec Group SAFC Hitech
Department: Sch of Chemistry
Organisation: Bangor University
Scheme: Standard Research (Pre-FEC)
Starts: 01 July 2001 Ends: 31 July 2003 Value (£): 130,789
EPSRC Research Topic Classifications:
Materials Synthesis & Growth Solar Technology
EPSRC Industrial Sector Classifications:
Electronics Energy
Related Grants:
GR/R21059/01
Panel History:  
Summary on Grant Application Form
This proposal seeks to find a novel solution to the twofold problem which limits the performance of back contacts on CdTe/CdS thin film photovoltaics, namely the Schottky barrier at the CdTe/ metal interface and the high diffusivity of high work function metals such as copper and gold. The method exploits the research carried out under EPSRC funding to find a method for the low temperature MOCVD growth and doping of CdTe/CdS photovoltaics. It is proposed that in situ doping, developed under these grants, will remove the need for diffusion of metal contact layers to form a P+ CdTe layer. This will enable a new approach to these contacts wh91:e a further layer of highly doped CdS will be grown to form the tunnel junction so that low diffusivity metals can then be used onto the n-type CdS to form an ohmic contact. It is anticipated that the outcome of this research will lead to low impedance back contacts that are stable over the lifetime of the photovoltaic cell and do not degrade the PV junction during processing.
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Organisation Website: http://www.bangor.ac.uk