| EPSRC Reference: |
GR/R21059/01 |
| Title: |
Mocvd Grown Tunnel Junction Contacts Onto Cdte Photovoltaics |
| Principal Investigator: |
Durose, Professor K |
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| Department: |
Physics |
| Organisation: |
Durham, University of |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 November 2001 |
Ends: |
28 February 2005 |
Value (£): |
83,616
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
Solar Technology |
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Summary on Grant Application Form |
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This proposal seeks to find a novel solution to the twofold problem which limits the perdormance of back contacts on CdTe/CdS thin film photovoltacis, namely the Schottky barrier at the CdTel metal interface and the high diffusivity of high work function metals such as copper and gold. The method exploits the research carried out under EPSRC funding to find a method for the low temperature MOCVD growth and doping of CdTe/CdS photovoltaics. It is proposed that in situ doping, developed under these grants, will remove the need for diffusion of metal contact layers to form a p+CdTe layer. This will enable a new approach to these contacts where a further layer of highly doped CdS will be grown to form the tunnel junction so that low diffusivity metals can then be used onto the n-type CdS to form an ohmic contact. It is anticipated that the outcome of this research will lead to low impedance back contacts that are stable over the lifetime of the photovoltaic cell and do not degrade the PV junction during processing.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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