Details of Grant 

EPSRC Reference:	GR/R19762/01
Title:	High Voltage Igbt Series Connection
Principal Investigator:	Finney, Professor SJ
Other Investigators:	Williams, Professor B W Fletcher, Professor JE
Researcher Co-Investigators:
Project Partners:	Dynex Semiconductor (CRRC Times UK)
Department:	Sch of Engineering and Physical Science
Organisation:	Heriot-Watt University
Scheme:	Standard Research (Pre-FEC)
Starts:	28 September 2001	Ends:	27 June 2005	Value (£):	173,717
EPSRC Research Topic Classifications:	Power Electronics
EPSRC Industrial Sector Classifications:	Electronics Energy
Related Grants:	GR/R29130/01
Panel History:
Summary on Grant Application Form
High frequency power switching techniques are well established in such applications as utility interface, power conditioning and motor control. If the power range of such techniques is to be extended, high-voltage switches capable of being series connected in high-voltage bridge-leg or single-ended chopper modes are required. Traditionally thyristor or GTO stacks were used in such applications; the former has no self-commutating ability whilst the latter, although, self-commutating, requires substantial snubber circuitry.IGBTs have a simple gate drive requirement and may be operated in the active region to control stress sharing during switching. This approach allows a substantial reduction in the requirements for auxiliary stress sharing circuits.Active gate control techniques have been shown to be effective in the control of series IGBT stacks, particularly during the turn-off transient. However problems remain in terms of controlling the over voltage associated with diode recovery, potential controller interaction and distribution of losses. Such effects are exacerbated at higher voltages where the number of series devices increases.The techniques developed will involve the series connection of 4.5kV, 400A (6.5kV when available) igbt technology capable of bridge-leg operation at voltages over 10kV.
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Organisation Website:	http://www.hw.ac.uk