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Details of Grant 

EPSRC Reference: GR/R17416/01
Title: Integration of Ill-Nitride Materials With Silicon Microsystems Technologies
Principal Investigator: Chalker, Professor PR
Other Investigators:
Taylor, Professor S Joyce, Dr TBF
Researcher Co-Investigators:
Project Partners:
Ricardo Group
Department: School of Engineering
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 01 March 2001 Ends: 29 February 2004 Value (£): 87,514
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Aerospace, Defence and Marine Chemicals
Electronics Healthcare
Related Grants:
Panel History:  
Summary on Grant Application Form
The purpose of the proposed programme is to explore the integration of Ill-nitride thin film materials such as GaN and AlGaN with silicon substrates. If successful this would enable novel microelectromechanical (MEM) structures to be manufactured with piezoelectric and pyroelectric transducer properties which are not possible with the properties of micromachined silicon alone.The proposal will address the heteroepitaxial deposition of lll-nitride materials on Si(111) and Si(001) substrates and the attendent issues of microfabrication of MEM structures based on this materials system. These 'hybrid' Ill-nitride silicon MEMs devices could be exploited in a range of devices such as pressure transducers, accelerometers, strain gauges, temperature sensors, microswitches and microactuators.The demonstrators from this programme will include an accelerometer incorporating nitride heterostructure (eg. AIGaN/GaN) bimorph cantilever and a piezoelectrically 'doped' piezoresistive pressure transducer. To the best of our knowledge these devices are novel MEM architectures which offer the prospects for advanced microsystem technologies used in engineering control and monitoring systems.
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Organisation Website: http://www.liv.ac.uk