| EPSRC Reference: |
GR/R16518/01 |
| Title: |
Chemical Vapour Deposition of Transition Metal Nitrides |
| Principal Investigator: |
Carmalt, Professor C |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Chemistry |
| Organisation: |
UCL |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 May 2001 |
Ends: |
30 September 2004 |
Value (£): |
192,368
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| EPSRC Research Topic Classifications: |
| Chemical Synthetic Methodology |
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| EPSRC Industrial Sector Classifications: |
| Manufacturing |
Chemicals |
| Electronics |
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Summary on Grant Application Form |
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The overall aim of this proposal is to deposit early transition metal nitride (e.g. TiN, ZrN, TaN) films by chemical vapour deposition (CVD) using novel precursors. An ideal source of nitrogen would be (Me3Si)2NH or (R3Si)NH2 (R = Et, Ph) due to the potential facile loss of the silyl substituent. Therefore, novel single-source precursors to nitrides will be developed from the reaction of metal amides with (Me3Si)2NH, (R3Si)NH2 and N(SiMe3)3. The formation of nitrides via single-source LPCVD (Low Pressure CVD) methodology will be investigated including detailed film growth studies and characterisation. In addition, the LPCVD and atmospheric pressure CVD (APCVD) of nitride films will be studied via dual-source reactions between metal amides (e.g. Ti(NMe2)4) or volatile metal halides and (Me3Si)2NH or (R3Si)NH2. Films will be grown on a variety of substrates and characterised by XPS, SEM/EDXA, glancing angle-XRD, reflectance and absorbance measurements.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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