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EPSRC Reference: GR/R12336/01
Title: Integrated Planar Doped Barrier Technology For Ultra Broadband Wide Dynamic Range Millimetre-Wave /Microwave Detectors/Sensors
Principal Investigator: Hu, Dr Z
Other Investigators:
Rezazadeh, Professor AA
Researcher Co-Investigators:
Project Partners:
IFR Ltd Marconi
Department: Electronic Engineering
Organisation: Kings College London
Scheme: Fast Stream
Starts: 01 April 2001 Ends: 31 March 2003 Value (£): 62,891
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Communications Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Millimetre-wave/microwave power detectors/sensors are widely used in fields such as communication and radar systems, test and measurement instrumentations. With the emergence of third generation mobile communication systems, the mobile system spectrum has been considerably widened with mobile phone set working on a few hundred MHz at low end to mobile broadband system (MBS) on 66 GHz at the top of the spectrum. This raises the demand of ultra broad band (0.01 to 70 GHz) and wide dynamic range (-75 dBm to 23 dBm) millimetre-wave/microwave detectors/sensors. Although it is possible to cover such wide frequency spectrum by different range of detectors/sensors, such approaches are both costly and inefficient. The aim of this fast stream programme is to design, fabricate, characterise and evaluate ultra broadband and wide dynamic range integrated CPW millimetre-wave/microwave detectors/sensors using GaAs planar doped barrier technology so to advance UK millimetre-wave/microwave detector/sensor technology and contribute to our competitiveness in these fields.
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