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Details of Grant 

EPSRC Reference: GR/N64595/01
Title: SPINTRONICS NETWORK
Principal Investigator: Gallagher, Professor B L
Other Investigators:
Nogaret, Professor A Cohen, Professor LF Gregg, Professor J
Thompson, Professor SM Hickey, Professor B Bland, Professor JAC
Alphenaar, Dr B Smith, Professor CG Main, Professor P
Chapman, Professor J Ziebeck, Professor K
Researcher Co-Investigators:
Project Partners:
Department: Sch of Physics & Astronomy
Organisation: University of Nottingham
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 2001 Ends: 31 January 2004 Value (£): 60,411
EPSRC Research Topic Classifications:
Magnetism/Magnetic Phenomena Materials Characterisation
Materials Processing Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Support is requested for a Network on Hybrid Magnetic/Semiconductor Structures and Spin Electronics (spintronics). This will help to focus and co-ordinate the activities of the participating research groups via meetings, workshops and personnel exchange. The principal aim of the network will be to establish collaborations between leading magnetism and semiconductor/nanofabircation groups. Major areas of collaboration will be i) spin injection transistors, i.e. novel analogues of established ferromagnet/paramegnet GMR and TMR structures in which spin polarised current is injected from ferromagnetic contacts into semiconductors or carbon nanotubes; ii) hybrid magnetic/semiconductor structures in which the magnetic fringing field of integral micron or sub-micron ferromagnetic structures directly modifies the longitudinal or Hall resistance of the semiconductor device; iii) the use of sub-micron semiconductor Hall sensors as scanning probe nanomagnetometers; iv) novel ferromagnetic analogues of established nanosclae semiconductor devices, including ferromagnetic single electron transistors, quantum wires, quantum dots, quantum point contacts and electron transport through single domain walls in sub-micron constrictions; v) growth and characterisation of magnetic semiconductors, leading to spin injection and spin tunnelling devices based on magnetic semiconductors.
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Further Information:  
Organisation Website: http://www.nottingham.ac.uk