Details of Grant 

EPSRC Reference:	GR/N64595/01
Title:	SPINTRONICS NETWORK
Principal Investigator:	Gallagher, Professor B L
Other Investigators:	Main, Professor P Gregg, Professor J Bland, Professor JAC Thompson, Professor SM Chapman, Professor J Nogaret, Professor A Smith, Professor CG Hickey, Professor B Ziebeck, Professor K Cohen, Professor LF Alphenaar, Dr B
Researcher Co-Investigators:
Project Partners:
Department:	Sch of Physics & Astronomy
Organisation:	University of Nottingham
Scheme:	Standard Research (Pre-FEC)
Starts:	01 February 2001	Ends:	31 January 2004	Value (£):	60,411
EPSRC Research Topic Classifications:	Magnetism/Magnetic Phenomena Materials Characterisation Materials Processing Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
Support is requested for a Network on Hybrid Magnetic/Semiconductor Structures and Spin Electronics (spintronics). This will help to focus and co-ordinate the activities of the participating research groups via meetings, workshops and personnel exchange. The principal aim of the network will be to establish collaborations between leading magnetism and semiconductor/nanofabircation groups. Major areas of collaboration will be i) spin injection transistors, i.e. novel analogues of established ferromagnet/paramegnet GMR and TMR structures in which spin polarised current is injected from ferromagnetic contacts into semiconductors or carbon nanotubes; ii) hybrid magnetic/semiconductor structures in which the magnetic fringing field of integral micron or sub-micron ferromagnetic structures directly modifies the longitudinal or Hall resistance of the semiconductor device; iii) the use of sub-micron semiconductor Hall sensors as scanning probe nanomagnetometers; iv) novel ferromagnetic analogues of established nanosclae semiconductor devices, including ferromagnetic single electron transistors, quantum wires, quantum dots, quantum point contacts and electron transport through single domain walls in sub-micron constrictions; v) growth and characterisation of magnetic semiconductors, leading to spin injection and spin tunnelling devices based on magnetic semiconductors.
Key Findings
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Organisation Website:	http://www.nottingham.ac.uk