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Details of Grant 

EPSRC Reference: GR/L95489/01
Title: TRANSVERSE AND VERTICAL CAVITY QUANTUM DOT LASERS
Principal Investigator: Mowbray, Professor D
Other Investigators:
Robson, Professor P Woodhead, Dr J Hill, Dr G
Skolnick, Professor M Rees, Professor GJ
Researcher Co-Investigators:
Project Partners:
Department: Physics and Astronomy
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1998 Ends: 30 September 2000 Value (£): 105,520
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Aerospace, Defence and Marine
Related Grants:
Panel History:  
Summary on Grant Application Form
The programme involves the design, fabrication and study of lasers utilising quasi zero-dimensionality quantum dots as their active region. Such devices are expected to exhibit superior characteristics relative to more conventional devices based on higher dimensionality quantum well actives regions. The programme will concentrate on In(Ga)As quantum dot based lasers which emit at approximately 1000nm. Both transverse and vertical cavity devices will be produced and studied. An important aim will be to achieve laser characteristics (Jth, Jth vs.T, differential gain) would represent at least a factor of two improvement in comparison to the best InGaAs-GaAs quantum well lasers. A detailed understanding of the physical processes in these novel systems will also be developed. Growth on substrates other than (001) will be investigated as evidence exists for reduced dot size and shape inhogeneity on non-(001) substrates. The influence of reduced dot inhomogeneity on the performance of both transverse and VCSEL devices will be investigated. A feasibility study of the possibility of fabricating III-V quantum dot lasers on Si substrates will be performed
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Organisation Website: http://www.shef.ac.uk