| EPSRC Reference: |
GR/L94703/01 |
| Title: |
OXYGEN PRECIPITATION IN SILICON: GENERATION OF ELECTRICALLY ACTIVE DEFECTS. |
| Principal Investigator: |
Jones, Professor R |
| Other Investigators: |
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| Department: |
Physics |
| Organisation: |
University of Exeter |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 October 1998 |
Ends: |
31 December 2001 |
Value (£): |
78,201
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Summary on Grant Application Form |
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This proposal seeks resources, consisting mainly of a project student and a multiprocessor workstation, to carry out modelling studies on the early stages of oxygen precipitation in silicon. In particular we want to investigate a) the structure and dynamical properties of the early thermal donors; and b) the optical and electronic properties of carbon-oxygen and hydrogen-oxygen defects.In all the applications we intend to correlate the results with experimental programmes being carried out in a number of laboratories.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.ex.ac.uk |