| EP/C010663/1 | Transfer dopants for wide band gap semiconductors | (P) |
| GR/S26224/01 | Realising the potential of silicon carbide | (P) |
| GR/R67200/01 | Transfer doping in diamond | (P) |
| GR/R62618/01 | First Principles Simulation of Covalently Bonded Materials | (C) |
| GR/R66975/01 | HIGH PERFORMANCE COMPUTING RESOURCES FOR THE AB INITIO SIMULATION OF COVALENTLY BONDED MATERIALS | (C) |
| GR/R46335/01 | Evolution of ion implantation damage in SI | (P) |
| GR/M84732/01 | HYDROGEN IN SILICON | (P) |
| GR/M53523/01 | POINT AND EXTENDED DEFECTS IN III-V NITRIDE SEMICONDUCTORS | (P) |
| GR/M03825/01 | FUNDAMENTAL STUDIES OF THE OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES OF DIAMOND | (P) |
| GR/L94703/01 | OXYGEN PRECIPITATION IN SILICON: GENERATION OF ELECTRICALLY ACTIVE DEFECTS. | (P) |
| GR/M05201/01 | T3E COMPUTING RESOURCES FOR AB INITIO SIMULATION OF COVALENTLY BONDED MATERIALS | (C) |
| GR/L34457/01 | DOPANT ENGINEERING: CARBON IN III-V MATERIALS | (P) |
| GR/K05528/01 | ACTIVATION EFFICIENCY OF C AS P-TYPE ACCEPTOR IN GAAS AND RELATED COMPOUNDS | (P) |
| GR/H91404/01 | DEFECT DIFFUSION AND AGGREGATION IN SEMI-CONDUCTORS | (P) |
| GR/H62893/01 | COMPUTATIONAL STUDIES IN PHYSICS AND CHEMISTRY | (C) |
| GR/H05661/01 | DISLOCATION AND POINT DEFECTS IN GAAS | (P) |
| GR/G35237/01 | A PROTOTYPE DESIGN AID FOR SCULPTURED SURFACES | (P) |
| GR/G13280/01 | COMPUTATIONAL STUDIES IN PHYSICS & CHEMISTRY | (C) |
| GR/F44977/01 | COMPUTATIONAL STUDIES IN PHYSICS AND CHEMISTRY | (C) |
| GR/F12495/01 | TEACHING COMPANY PROGRAMME BETWEEN LOUGHBOROUGH UNIVERSITY AND MARCONI COMMAND AND CONTROL SYSTEMS LTD | (P) |
| GR/E66538/01 | INTERACTION OF IMPURITIES WITH DISLOCATION CORES IN SILICON | (P) |
| GR/E51633/01 | COMPUTATIONAL STUDIES IN PHYSICS AND CHEMISTRY | (C) |
| GR/E29724/01 | THEORETICAL INVESTIGATION INTO TOPOLOGICAL DEFECTS IN AMORPHOUS SEMICONDUCTORS | (P) |
| GR/E38528/01 | INTEGRATION METHODOLOGIES IN PCB MANUFACTURE | (C) |