| EPSRC Reference: |
GR/L50990/01 |
| Title: |
CARBON DOPED BRAGG STACKS FOR VCSELS GROWN BY CHEMICAL BEAM EPITAXY |
| Principal Investigator: |
Bullough, Dr T |
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| Department: |
Materials Science & Eng |
| Organisation: |
University of Liverpool |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
14 July 1997 |
Ends: |
13 January 2000 |
Value (£): |
102,581
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| No relevance to Underpinning Sectors |
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Summary on Grant Application Form |
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Carbon is considered to be a preferred p-dopant for a number of GaAs-based devices, although problems persist in its use in MBE and MOVPE. It promises to be a suitable replacement for Be in MBE-grown DBR structures for the next generation of higher-power, high efficiency VCSELs. We propose to investigate C as a p-dopant in such DBR Structures grown by CBE, in parallel with a collaborative investigation of MBE grown C-doped DBRs at the IRC Semiconductor Materials. Fundamental aspects of C incorporation and dopant activation will be investigated by both Liverpool and the IRC, concentrating on H-incorporation, strain relaxation, thermal stability and C diffusion-related effects in highly C-doped Al(Ga)As with uniform, graded and delta dopant profiles. In parallel, complete DBR and VCSEL structures with C-doped p-stacks grown by CBE at Liverpool will be assessed by the IRC, who will compare them with equivalent C-doped p-stacks grown by MBE to allow a comparison of the growth techniques.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.liv.ac.uk |