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Details of Grant 

EPSRC Reference: GR/K34443/01
Title: PHYSICS AND TECHNOLOGY OF THREE DIMENSIONAL NANOMETRE ELECTRONIC STRUCTURES
Principal Investigator: Pepper, Professor Sir M
Other Investigators:
Jones, Dr G Ford, Professor CJB Nicholls, Dr JT
Jones, Dr G Jones, Professor G Smith, Professor CG
Ritchie, Professor D
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Cambridge
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1994 Ends: 30 September 1997 Value (£): 1,852,960
EPSRC Research Topic Classifications:
Condensed Matter Physics Materials Characterisation
Materials Processing Materials Synthesis & Growth
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
Using advanced processing and growth techniques, (in situ focused ion beam lithography and in situ cleaning of etched substrates prior to regrowth), we will fabricate III-V semiconductor structures for the investigation of new quantum transport phenomena. Priorities include studies of wavefunction dependent transport, mutually interacting electron and electron-hole gases employing structures in which the layers are separately contacted and patterned laterally. Very high mobility layers produced by our Varian facility will be used to fabricate structures in which the quantum version of the semi-classical Coulomb blockade will be investigated. High frequency properties of this structure will be studied as a possible current standard and mesoscopic topics in the regimes of ballistic transport and quantum interference. As well as exploiting very low temperatures and high magnetic fields for investigation of the phenomena, higher temperature properties will be investigated when length scales can be reduced such as interference based on electron injection into selected, defined, regions.
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Organisation Website: http://www.cam.ac.uk