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Details of Grant 

EPSRC Reference: GR/K27698/01
Title: IN (GAA1)AS & IN(GAA1)P STRAINED LAYER HETEROSTRUCTURE FOR ENHANCED OPTOELECTRONIC DEVICE APPLICATIONS
Principal Investigator: Hopkinson, Professor M
Other Investigators:
Whitehouse, Professor CR David, Professor J Robson, Professor P
Researcher Co-Investigators:
Project Partners:
Department: Electronic and Electrical Engineering
Organisation: University of Sheffield
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 1995 Ends: 31 January 1997 Value (£): 24,686
EPSRC Research Topic Classifications:
Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
We propose to investigate two closely related quaternary strained layer systems; In(GaAl)As/InP and In(GaAl)P/GaAs. These two material systems have considerable potential for use in optoelectronic devices such as lasers (inc. VCSELs), modulators and avalanche photodiodes. We propose to characterise the microstructures of these materials using a combination of TEM and XRD measurements. In addition evaluation of optical and electrical performance will be carried out using techniques such as PL lifetime and diode leakage measurements.Altering the quaternary composition in these material systems allows us to control the extent of misfit strain between the epilayer and substrate. This presents us with an excellent opportunity to study dislocation nucleation, multiplication and reaction over a wide range of compressive and tensile strains. In addition we intend to investigate phenomena such as quaternary alloy ordering and epilayer cracking in these systems.Further goals of this project are to identify the practical range of composition and layer thickness which are suitable for optoelectronic devices. We propose to correlate basic device properties with our microstructural observations.
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Organisation Website: http://www.shef.ac.uk