Name:	Professor J David
Organisation:	University of Sheffield
Department:	Electronic and Electrical Engineering
Current EPSRC-Supported Research Topics:	Optical Communications Optical Devices & Subsystems Optoelect. Devices & Circuits

Current EPSRC Support

EP/Y024745/1 Sheffield-Phlux Advance Research Collaboration (SPARC) (C) EP/W003244/1 Monolithic on-chip integration of microscale laser diodes (uLDs) and electronics for micro-displays and visible light communications (C)

Previous EPSRC Support

EP/T013001/1 Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms (C) EP/N020715/1 Realising a solid state photomultiplier and infrared detectors through bismide containing semiconductors (C) EP/K001469/1 Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions (C) EP/J015814/1 InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications (C) EP/K004220/1 GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology (C) EP/H031464/1 Ultra high detectivity single carrier multiplication InAs avalanche photodiodes for IR optical detection (C) EP/E065007/1 New high-performance avalanche photodiodes based on the unique properties of dilute nitrides (P) EP/D505712/1 Support for the EPSRC National Centre for III-V Technologies at Sheffield (C) GR/R42450/01 HACT devices using nitride matrials (P) GR/K27698/01 IN (GAA1)AS & IN(GAA1)P STRAINED LAYER HETEROSTRUCTURE FOR ENHANCED OPTOELECTRONIC DEVICE APPLICATIONS (C) GR/J49549/01 IMPACT IONISATION PROCESSES IN LOW DIMENSIONAL STRUCTURES AND DEVICES (P) GR/J52549/01 COORDINATED X-RAY AND TEM STUDY OF STRAIN RELAXATION IN <111> ORIENTED PIEZOELECTRIC INGAAS/GAAS EPILAYERS (C) GR/H45773/01 PIEZOELECTRIC STRAINED LAYER QUANTUM WELLS FOR OPTOELECTRONIC DEVICES (C)

Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator