| EPSRC Reference: |
GR/K12601/01 |
| Title: |
LOW TEMPERATURE MOLECULAR BEAM EPITAXY GROWTH OF METAL SEMICONDUCTOR HETEROEPITAXIAL STRUCTURES |
| Principal Investigator: |
Missous, Professor M |
| Other Investigators: |
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| Department: |
Electrical Engineering & Electronics |
| Organisation: |
UMIST |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 February 1995 |
Ends: |
31 January 1997 |
Value (£): |
148,957
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
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Summary on Grant Application Form |
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The growth of high quality electrically and optically active GaAs at temperatures low enough to permit growth compatibility between the semiconductor and a metal (epi Aluminium in this case) is the subject of this proposal. The work will center on the controlled doping of GaAs at low temperatures and subsequently the overgrowth of such layers on epitaxial Al within the MBE environment. The inverted interface between the epitaxial Al and the overgrown low temperature GaAs will be studied from a fundamental viewpoint (Schottky barrier height determination and formation) and its application in devices combining metal-semiconductor multi-layers. Ballistic transport across the GaAs-Al-GaAs interfaces will be investigated.
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Key Findings |
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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