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Details of Grant 

EPSRC Reference: GR/J86759/01
Title: STUDY OF INGAP/GAAS DHBTS FOR HIGH FREQUENCY POWER APPLICATIONS
Principal Investigator: Rezazadeh, Professor AA
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Electronic Engineering
Organisation: Kings College London
Scheme: Standard Research (Pre-FEC)
Starts: 01 June 1995 Ends: 31 August 1998 Value (£): 141,236
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
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Panel History:  
Summary on Grant Application Form
To develop a suitable theoretical model for design of power DHBTs based on InGaP/GaAs.To investigate various self-aligned steps for a fully self-aligned device structure.To fabricate and assess the power and frequency of DHBTs.
Key Findings
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Summary
Date Materialised
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