| EPSRC Reference: |
GR/J84182/01 |
| Title: |
NUCLEATION MECHANISMS AND THEIR EXPLOITATION FOR THE SELECTIVE AREA GROWTH OF CVD DIAMOND |
| Principal Investigator: |
Jackman, Professor RB |
| Other Investigators: |
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| Project Partners: |
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| Department: |
Electronic and Electrical Engineering |
| Organisation: |
UCL |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
15 April 1994 |
Ends: |
14 October 1997 |
Value (£): |
169,504
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| EPSRC Research Topic Classifications: |
| Materials Synthesis & Growth |
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Summary on Grant Application Form |
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It is believed that a potential multi-billion dollar worldwide annual market exists for high quality thin films of diamond. At present, microwave plasma enhanced chemical vapour deposition (MWPECVD) represents an effective method for the growth of diamond on non-diamond substrates at low pressures and at reasonable cost. However, films produced are typically polycrystaline and highly defective in nature severely hindering the prospects for commercial exploitation of the films. A recent breakthrough in the field has shown that a biased-MWPECVD nucleation step prior to thin film growth enables epitaxially orientated diamond to be grown on Si(100). Nothing is known concerning the mechanism by which this nucleation enhancement is achieved. This project aims to uncover the mechanism and to use this information to consider the prospects for the promotion of spatially controlled nucleation by non MWPECVD methods to enable high quality selective area CVD growth to be carried out.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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