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Details of Grant 

EPSRC Reference: GR/J78211/01
Title: A STUDY OF CARRIER GENERATION AND FLOW IN POLYCRYSTALLINE SILICON
Principal Investigator: Eccleston, Professor W
Other Investigators:
Milne, Professor WI Amaratunga, Professor G
Researcher Co-Investigators:
Project Partners:
Department: Electrical Engineering and Electronics
Organisation: University of Liverpool
Scheme: Standard Research (Pre-FEC)
Starts: 01 February 1995 Ends: 31 January 1998 Value (£): 211,582
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
Polysilicon is an integral part of MOS, advanced bipolar and thin film display technologies. In all these structures the flow of majority carriers and the generation and recombination is of considerable importance. This understanding of such phenomena is, however, very poor and some of the limitations of polysilicon may be due to phenomena which are relatively easy to control, such as the barrier heights between grains or scattering associated with very irregular surfaces. Preliminary work suggests that an analytical treatment of carrier flow is possible and this leads one to believe that much higher effective mobilities and lower trapped charge may be obtainable. There would then be the possibility of producing multilayer circuits in the material of very low cost and acceptable performance. A further development of the work would be a consideration of the band structure in small grain material with possible implications for quantum effects or even electroluminescence. An analytical rather than computational technique is preferred because of the greater insight that this approach demands, although some modelling will be useful to highlight possible quantitative deficiencies in the analytical equations.
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Organisation Website: http://www.liv.ac.uk