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Details of Grant 

EPSRC Reference: GR/J49648/01
Title: LOW ENERGY DOPANT AND SELF IMPLANTATION DURING MBE GROWTH OF SI AND GESI
Principal Investigator: Kubiac, Dr R
Other Investigators:
Parker, Professor E Armour, Professor D
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Warwick
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 1993 Ends: 30 September 1996 Value (£): 113,698
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:  
Summary on Grant Application Form
1. The operation of the low energy ion dopant implanter as a stand-alone system to determine optimum conditions for low energy n-type doping in Si-SiGe solid source MBE.2. To design and procure a dedicated in-situ n-type ion doping source for use in the existing MBE growth facility.Progress:The objectives of this programme have been modified following a change to our original programme to include the establishment and operation of a SiGe MBE growth facility and following recent developments in ion doping source technology. The ion implanter has been improved during this period to give a five-fold increase in ion currents and has been used to produce Sb, B, Ga, As and Si ion beams. Ga+ and As+ have been implanted in Si and SiGe at energies of 5.5 and 10 keV. Electrical and SIMS measurements indicated that ultra-shallow pn junctions had been produced with good electrical characteristics. Studies have shown that the implanter is capable of producing narrow highly doped n-type layers over the range 1015 - 1020 cm-3. A basic SiGe MBE growth chamber has been fitted to the implanter and the Si and Ge evaporation facilities have been tested and are now operational. Low energy ion doping tests, initially with Sb+ ions, are shortly to commence.
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Organisation Website: http://www.warwick.ac.uk