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Name: |
Professor D Armour |
Organisation: |
University of Salford |
Department: |
Sch of Science,Engineering & Environment |
Current EPSRC-Supported Research
Topics: |
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Current EPSRC Support |
There is no current EPSRC Support |
Previous EPSRC Support |
GR/L68902/01 | ISOTOPIC DEPOSITION OF THIN FILM MAGNETIC MATERIALS | (C) |
GR/L39865/01 | AN ASSESSMENT OF VARIABLE ENERGY ION BEAM DEPOSITION OF METAL/SEMICONDUCTOR MULTILAYERS | (C) |
GR/K89962/01 | CHARACTERISATION AND MODELLING OF LOW DAMAGE ION ETCHING | (C) |
GR/J56363/01 | AN ION BEAM CRYSTALLOGRAPHY (MEIS) FACILITY FOR STUDYING SURFACE AND INTERFACE STRUCTURE | (P) |
GR/J35160/01 | INTERPRETATION AND INVERSION OF SPUTTER DEPTH PROFILES BASED IMPETUS TREATMENT OF THE RELOCATION PROCESSES | (P) |
GR/J49648/01 | LOW ENERGY DOPANT AND SELF IMPLANTATION DURING MBE GROWTH OF SI AND GESI | (C) |
GR/H23887/01 | THE FABRICATION AND ANALYSIS OF NANOSTRUCTURES BY ULTRA LOW ENERGY ION BEAMS. | (P) |
GR/H05609/01 | THE SYNTHESIS OF NOVEL ORGANOMETALLIC PRESURSORS & THEDEVELOPMENT OF A CVD PROCESS TO GROW THIN FILMS OF CIG | (P) |
GR/F34565/01 | HIGH PRECISION CHEMICAL ANALYSIS FOR FUTURE SILICON MATERIALS/DEVICES | (P) |
GR/F00904/01 | THE FABRICATION OF NEW SILICON DEVICES USING MBE AND ION IMPLANTATION | (P) |
GR/E34254/01 | THE GROWTH AND DOPING OF SEMICONDUCTING LAYERS USING LOW ENERGY ION BEAMS | (C) |
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Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator
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