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Details of Grant 

EPSRC Reference: GR/J02353/01
Title: DEVELOPMENT AND APPLICATION OF STRAIN, ORIENTATION AND ATOMIC NUMBER SENSITIVE BSE SEM TECHNIQUES
Principal Investigator: Booker, Dr GR
Other Investigators:
Hirsch, Sir P Roberts, Professor SG Czernuszka, Dr J
Wilshaw, Professor P Martin, Dr J Derby, Professor B
Researcher Co-Investigators:
Project Partners:
Department: Materials
Organisation: University of Oxford
Scheme: Standard Research (Pre-FEC)
Starts: 01 June 1993 Ends: 31 May 1995 Value (£): 187,770
EPSRC Research Topic Classifications:
Materials Characterisation
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
It is proposed to develop and apply three techniques based on Back Scattered Electrons from bulk material in an SEM: (i) develop in a collaborative programme with JEOL the Electron Channelling Contrast Imaging technique for the observation of a) individual dislocations near the surface and b) strain from groups of dislocations at depths of ~ 1mm. The ECCI will be applied to study a) strain relaxation in Sil-XGeX/Si heterostructures b) plastic zones around cracks in semibrittle materials and superalloys. (ii) develop high spatial resolution (5-10nm) chemical compositional analysis using back- scattered electron and bulk specimens. (iii) apply Back Scattered Electron Diffraction patterns to determine microtexture/grain misorientations in a) directionally recrystallised superalloys and to identify secondary recrystallisation sites as a function of processing parameters (b) dynamic recrystallisation of Cu to develop a nucleation criterion for a complete analytical model for the observed microstructure.
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Organisation Website: http://www.ox.ac.uk