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EPSRC Reference: GR/H69489/01
Title: GROWTH OF GA2SE3 THIN FILMS BY METAL ORGANIC CHEMICAL VAPOUR DEPOSITION (MOCVD)
Principal Investigator: Wright, Dr AC
Other Investigators:
Williams, Professor W Williams, Professor J Yates, Dr H
Researcher Co-Investigators:
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Department: Faculty of Science & Technology
Organisation: Glyndwr University
Scheme: Standard Research (Pre-FEC)
Starts: 01 April 1993 Ends: 30 June 1995 Value (£): 65,759
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
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Summary on Grant Application Form
This research programme concerns the growth of the wide bandgap materials Ga2Se3 and Ga2S3 as thin films using vapour phase methods. We will investigate the growth of these materials using two different methods; firstly by a conventional organometallic route eg trimethygallium (TMGa) and various gaseous H2Se/H2S and liquid DMSe/DMS/thiols/selenols with direct gas phase reaction of H2Se/H2S with heated GaAs/GaP substrates. In addition the microstructure and optoelectronic properties will be investigated for both approaches. The microstructure and optoelectronic properties will be investigated as a function of growth method and conditions using x-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL) and the Hall effect. The doping characteristics of these materials will also be explored.
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