| EPSRC Reference: |
GR/A00546/01 |
| Title: |
AF: NOVEL ELECTRONIC & OPTOELECTRONIC DEVICES USING SI 1-XGEX AND SI1-YCY |
| Principal Investigator: |
Paul, Professor DJ |
| Other Investigators: |
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| Researcher Co-Investigators: |
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| Project Partners: |
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| Department: |
Physics |
| Organisation: |
University of Cambridge |
| Scheme: |
Advanced Fellowship (Pre-FEC) |
| Starts: |
01 April 2000 |
Ends: |
30 September 2003 |
Value (£): |
100,517
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
Materials Processing |
| Optoelect. Devices & Circuits |
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| Panel History: |
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Summary on Grant Application Form |
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A number of novel Si / Si1-xGex and Si1-yCy transistors are proposed which have performance to compete with high speed III-V transistors in electronic and optoelectronic areas. In addition, all the devices proposed are produced on silicon wafers, greatly, aiding the introduction of successful devices into mainstream markets and integration with CMOS. Electrical devices include vertical field effect transistors with potential performance greater than 200 GHz for fT and fmax hot electron transistors predicted to perform at over 500 GHz and resonant tunnelling diode (RTD) memories at about 150 GHz. In the optoelectronics area, a Si / Si1-xGex / Si1-yCy / Si p-i-n diode is proposed for 1.55 um emitter / detector operation and a superlattice intersubband laser for 3 to 10 um operation.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
| Summary |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.cam.ac.uk |