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Details of Grant 

EPSRC Reference: GR/S42262/01
Title: Low-Temperature Focussed Ion-Beam Fabrication of Nanoscale Single-Electron Intrinsic Josephson Devices
Principal Investigator: Grovenor, Professor C
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Institute for Physical High Technology National Physical Laboratory NPL Neocera Inc
Department: Materials
Organisation: University of Oxford
Scheme: Standard Research (Pre-FEC)
Starts: 01 October 2003 Ends: 30 September 2006 Value (£): 75,923
EPSRC Research Topic Classifications:
Materials Characterisation Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
GR/S42255/01
Panel History:  
Summary on Grant Application Form
As a result of a previous collaborative project between the Oxford Materials Department and UCL ( which Oxford have supported under EPSRC grant GR/M66035) we have shown that thin TI-2212 films can be used to fabricate novel JJ devices with exciting properties, but that there are several technical limitations to the use of films with the current epitaxial maximum thicknesses of 400-700nm. This student project will study the control of growth conditions to allow much thicker films to be synthesised without the porosity or the a-axis grains that currently are found by every groups that has explored the thickness range above 1 micron. The key areas of study will be to identify the optimum mmicrostructure required for the devices that UCL will fabricate, to investigate the fundamental mechanisms by which (a) porosity and (b) a-axis grains are nucleated during TI-2212 synthesis, and then to design and implement alterations to the standard growth conditions to allow high quality 2 micron, epitaxial TI-2212 films to be prepared for the device fabrication programme.
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Organisation Website: http://www.ox.ac.uk