Details of Grant 

EPSRC Reference:	GR/N65660/01
Title:	SIGE FOR MOS TECHNOLOGIES (HMOS) PROGRAMME) PHASE II
Principal Investigator:	Evans, Professor A
Other Investigators:	Parker, Professor G Kemhadjian, Professor H Kemhadjian, Professor H
Researcher Co-Investigators:
Project Partners:
Department:	Electronics and Computer Science
Organisation:	University of Southampton
Scheme:	Standard Research (Pre-FEC)
Starts:	04 July 2001	Ends:	03 January 2005	Value (£):	383,832
EPSRC Research Topic Classifications:	Electronic Devices & Subsys. Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:	Electronics
Related Grants:
Panel History:
Summary on Grant Application Form
An applications driven, multi disciplinary co-ordinated research activity involving thirteen research teams from nine universities and industry (Mitel Semiconductors, Daimler-Chrysler (Ulm), Infineon (Munich) and Avant!) concerned with demonstrating at device, circuit and system level industrially significant performance enhancements (analogue and digital) available in Si MOS technologies through the incorporation of SiGe. The proposal consolidates and extends current activity by the existing consortium and incorporates improved process schedules and a new management structure with strong links between device teams and circuit designers. Further performance improvements in both pseudomorphic and virtual substrate based devices will be sought down to 100nm gate lengths and performance evaluations in RF, micropower and digital CMOS circuitry will be made. The flagship demonstrator is a full RF receiver implemented in SiGe. New approaches to virtual substrate and active layer growth and process integration are included. The programme brings together teams working on device design and simulation, epitaxial layer growth, process development, electrical and structural characterisation and circuit/system designers with an overall aim to establish in the UK an infrastructure which is the world focus for SiGe MOS work, with commercial potential and with the capability of attracting world-wide interest and investment.
Key Findings
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Further Information:
Organisation Website:	http://www.soton.ac.uk