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Details of Grant 

EPSRC Reference: GR/L48652/01
Title: A SIGE ON INSULATOR TECHNOLOGY FOR HIGH-SPEED, LOW POWER MOBILE COMMUNICATIONS APPLICATIONS
Principal Investigator: Ashburn, Professor P
Other Investigators:
Redman-White, Professor W Hamel, Dr J Kemhadjian, Professor H
Kemhadjian, Professor H Parker, Professor G
Researcher Co-Investigators:
Project Partners:
Pre Nexus Migration QinetiQ Zarlink
Department: Electronics and Computer Science
Organisation: University of Southampton
Scheme: Standard Research (Pre-FEC)
Starts: 04 January 1998 Ends: 03 July 2001 Value (£): 541,906
EPSRC Research Topic Classifications:
Electronic Devices & Subsys. Energy Efficiency
EPSRC Industrial Sector Classifications:
Electronics No relevance to Underpinning Sectors
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal is for a collaborative programme of research to develop a SiGe HBT technology for mobile communications applications up to and beyond 5.5 GHz. High speed and low power consumption will be achieved by producing SiGe HBTs on wafer bonded SOI substrates incorporating buried silicide layers. Experimental work will include studies of process uniformity, defect control, and yield for different device architectures and SiGe growth modes, including selective and non-selective LPCVD SiGe growth and gas source MBE. Theoretical work will include the development of improved circuit models for SiGe HBTs on Si and SOI substrates, which incorporate mechanisms such as neutral base recombination and self heating in SOI islands. In addition, mixed mode circuit simulations will be performed to investigate how the overall device and process design can be optimised to give minimum power consumption consistent with circuit operation at 5.5 GHz and beyond. Fundamental scientific issues addressed by the project will include the introduction of carbon into SiGe to suppress transient enhanced diffusion (TED), investigations of novel process architectures which avoid direct implantation into SiGe and hence avoid TED, and investigations of the effectiveness of buried silicides for heat removal from SOI islands.
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Further Information:  
Organisation Website: http://www.soton.ac.uk