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Details of Grant 

EPSRC Reference: GR/L20610/01
Title: SHALLOW P - AND N - TYPE JUNCTIONS IN SUB HALF MICRON BIPOLAR TRANSISTORS
Principal Investigator: Ashburn, Professor P
Other Investigators:
Parker, Professor G Booker, Dr GR
Researcher Co-Investigators:
Project Partners:
Pre Nexus Migration
Department: Electronics and Computer Science
Organisation: University of Southampton
Scheme: Standard Research (Pre-FEC)
Starts: 01 March 1997 Ends: 31 March 2000 Value (£): 135,397
EPSRC Research Topic Classifications:
Electronic Devices & Subsys.
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
This proposal is for a collaborative programme of research between Southampton University, Oxford University and GEC Plessey Semiconductors to investigate ho fluorine can be used to produce ultra-shallow p- and n- type junctions by diffusion from polysilicon. The influence of fluorine on p- and n- type dopant diffusion, polysilicon grain size and interfacial oxide structure will be measured and modelled in sub half micron emitters. The understanding thus gained will then be used to design sub half micron pnp bipolar transistors with ultra-shallow junctions and low emitter resistances. A wide range of thermal budgets will be investigated including those low enough to be compatible with SiGe processing. The passivating properties of fluorine that are seen at very low thermal budgets will be measured and modelled and the physical mechanisms controlling the base current identified. This new understanding will then be applied to optimise the trade-offs between thermal budget, fluorine passivation, interfacial oxide break-up and relaxation of the SiGe.
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Organisation Website: http://www.soton.ac.uk