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EPSRC Reference: EP/N031776/1
Title: Semiconductor Quantum Photonics: Control of Spin, Exciton and Photon Interactions by Nano-Photonic Design
Principal Investigator: Skolnick, Professor M
Other Investigators:
Krizhanovskii, Professor D Farrer, Dr I Fox, Professor AM
Whittaker, Professor DM Wilson, Professor L Heffernan, Professor J
Kok, Professor P Schomerus, Professor HU Ritchie, Professor D
Chekhovich, Dr EA Tartakovskii, Professor A
Researcher Co-Investigators:
Project Partners:
Cardiff University Heriot-Watt University Hitachi Europe Ltd
Swiss Federal Inst of Technology (EPFL) Toshiba University of St Andrews
Department: Physics and Astronomy
Organisation: University of Sheffield
Scheme: Programme Grants
Starts: 20 July 2016 Ends: 19 April 2022 Value (£): 5,638,689
EPSRC Research Topic Classifications:
Materials Synthesis & Growth Optoelect. Devices & Circuits
EPSRC Industrial Sector Classifications:
Electronics Information Technologies
Related Grants:
Panel History:
Panel DatePanel NameOutcome
20 Apr 2016 Programme Grant Interviews - 20 -21 April 2016 (Physical Sciences) Announced
Summary on Grant Application Form
We seek to exploit the highly advantageous properties of III-V semiconductors to achieve agenda setting advances in the quantum science and technology of solid state materials. We work in the regime of next generation quantum effects such as superposition and entanglement, where III-V systems have many favourable attributes, including strong interaction with light, picosecond control times, and microsecond coherence times before the electron wavefunction is disturbed by the environment.

We employ the principles of nano-photonic design to access new regimes of physics and potential long term applications. Many of these opportunities have only opened up in the last few years, due to conceptual and fabrication advances. The conceptual advances include the realisation that quantum emitters emit only in one direction if precisely positioned in an optical field, that wavepackets which propagate without scattering may be achieved by specific design of lattices, and that non-linearities are achievable at the level of one photon and that quantum blockade can be realised where one particle blocks the passage of a second.

The time is now right to exploit these conceptual advances. We combine this with fabrication advances which allow for example reconfigurable devices to be realised, with on-chip control of electronic and photonic properties. We take advantage of the highly developed III-V fabrication technology, which underpins most present day solid-state light emitters, to achieve a variety of chip-based quantum physics and device demonstrations.

Our headline goals include reconfigurable devices at the single photon level, a single photon logic gate based on the fully confined states in quantum dots positioned precisely in nano-photonic structures, and coupling of states by designed optical fields, taking advantage of the reconfigurable capability, to enhance or suppress optical processes. Quantum dots also have favourable spin (magnetic moments associated with electrons) properties. We plan to achieve spins connected together by photons in an on-chip geometry, a route towards a quantum network, and long term quantum computer applications. As well as quantum dots, III-V quantum wells interact strongly with light to form new particles termed polaritons. We propose to open the new field of topological polaritonics, where the nano-photonic design of lattices leads to states which are protected from scattering and where artificial magnetic fields are generated. This opens the way to new coupled states of matter which mimic the quantised Hall effects, but in a system with fundamentally different wavefunctions from electrons.

Finally our programme also depends on excellent crystal growth. We target one of the main issues limiting long term scale up of quantum dot technologies, namely site control. We will employ two approaches, which involve a combination of patterning, cleaning and crystal growth to define precisely the quantum dot location, both based around the formation of pits to seed growth in predetermined locations. Success here will be a major step in bringing semiconductor quantum optics into line with the position enjoyed by the majority of established semiconductor technologies where scalable lithographic processes have been a defining feature of their impact.

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Organisation Website: http://www.shef.ac.uk