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Details of Grant 

EPSRC Reference: EP/K040243/1
Title: A Plasma-assisted Molecular Beam Epitaxy System for Engineering of Graphene/Boron Nitride Low Dimensional Structures
Principal Investigator: Novikov, Professor S
Other Investigators:
Beton, Professor P Foxon, Professor CT Khlobystov, Professor A
Eaves, Professor L Mellor, Dr CJ Notingher, Professor I
Researcher Co-Investigators:
Project Partners:
Hitachi IQE (Europe) Ltd National Physical Laboratory
Plessey Semiconductors Ltd RIBER RTA Instruments Ltd
Sharp Laboratories of Europe Ltd Teledyne e2v (UK) Ltd Veeco Instruments Ltd
Department: Sch of Physics & Astronomy
Organisation: University of Nottingham
Scheme: Standard Research - NR1
Starts: 01 February 2013 Ends: 31 January 2016 Value (£): 0
EPSRC Research Topic Classifications:
Materials Synthesis & Growth
EPSRC Industrial Sector Classifications:
Related Grants:
Panel History:
Panel DatePanel NameOutcome
12 Feb 2013 EPSRC Equipment Business Case - February 2013 Announced
Summary on Grant Application Form
We will design and commission a molecular beam epitaxy (MBE) system dedicated to the growth of high-quality, large-area epitaxial layers and heterostructures composed of graphene, boron nitride and related compounds. We will collaborate with a major manufacturer of MBE equipment to design a new growth system which will provide the high temperatures required for graphene growth. This equipment will be used to identify and optimise the conditions for growth of single atomic layers, followed by the programmed growth and processing of heterostructures in which single or multiple layers of graphene and boron nitride are grown sequentially to provide architectures by which new types of band-structure engineered functional devices can be realised. We will commission an electron beam evaporator to deposit, in a controlled fashion, both insulating and metallic layers without damaging the MBE-grown graphene layers. These engineered graphene/boron nitride heterostructures are required to support the fabrication of a new class of multilayer (vertical) electronic devices in which charge carriers can move perpendicular to the plane of the graphene layers. The heterostructures will be investigated using a range of structural, optical and electronic techniques and will be made available to our industrial collaborators and to other UK researchers.
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Further Information:  
Organisation Website: http://www.nottingham.ac.uk