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Researcher Details
Name: Professor S Novikov
Organisation: University of Nottingham
Department: Sch of Physics & Astronomy
Current EPSRC-Supported Research Topics:
Condensed Matter Physics Magnetism/Magnetic Phenomena
Materials Characterisation Materials Synthesis & Growth
Surfaces & Interfaces

Current EPSRC Support
EP/W035510/1 Boron-based semiconductors - the next generation of high thermal conductivity materials(P)
EP/V05323X/1 Growth of hexagonal boron nitride for deep ultraviolet photonics, quantum emitters and van der Waals substrates(C)
EP/T019018/1 EPI2SEM: EPItaxial growth and in-situ analysis of 2-dimensional SEMiconductors(C)
Previous EPSRC Support
EP/P019080/1 Strain-engineered graphene: growth, modification and electronic properties(C)
EP/M013294/1 UK Quantum Technology Hub for Sensors and Metrology(C)
EP/L013908/1 Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.(P)
EP/K008323/1 Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices.(P)
EP/K027808/1 Development of new CuMn-V epitaxial antiferromagnetic semiconductors for applications in spintronics(C)
EP/K014471/1 Silicon Compatible GaN Power Electronics(C)
EP/K040243/1 A Plasma-assisted Molecular Beam Epitaxy System for Engineering of Graphene/Boron Nitride Low Dimensional Structures(P)
EP/J015792/1 Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.(C)
EP/I035501/1 Solar cells based on InGaN nanostructures(C)
EP/I004203/1 Amorphous and crystalline GaNAs alloys for solar energy conversion devices(P)
EP/G030634/1 Feasibility study of plasma-assisted electroepitaxy for the growth of GaN layers and bulk crystals(P)
EP/G035202/1 Terahertz acoustic laser (saser) devices: fabrication and characterisation(C)
EP/G046867/1 Free-standing zinc-blende (cubic) GaN, AlN and AlGaN layers grown by molecular beam epitaxy(P)
TS/G001448/1 Green Laser Diodes(C)
EP/G007160/1 Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting(P)
EP/F019076/1 Defect reduction in GaN using the in-situ growth of transition metal nitride layers(C)
EP/D051487/1 Investigation of growth kinetics and incorporation of impurities in group III-nitrides and group III-dilute nitrides using mass spectroscopy(R)
Key: (P)=Principal Investigator, (C)=Co-Investigator, (R)=Researcher Co-Investigator