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Details of Grant 

EPSRC Reference: EP/C010663/1
Title: Transfer dopants for wide band gap semiconductors
Principal Investigator: Jones, Professor R
Other Investigators:
Researcher Co-Investigators:
Project Partners:
Department: Physics
Organisation: University of Exeter
Scheme: Standard Research (Pre-FEC)
Starts: 03 October 2005 Ends: 02 October 2008 Value (£): 210,349
EPSRC Research Topic Classifications:
Materials Characterisation Materials Processing
EPSRC Industrial Sector Classifications:
Electronics
Related Grants:
Panel History:  
Summary on Grant Application Form
Previous investigations at Exeter have predicted that both C60 and C60F36 can act as transfer dopants on hydrogenated diamond. Very recent experiments have confirmed both predictions and hole densities of around 10^(13) cm^(-2) activated with an energy about an order of magnitude smaller than that of the boron level. For the first time an all-solid-state transfer dopant has been fabricated which is non-toxic and thermally stable unlike aqueous solutions which have previously been found to act as transfer dopants. It is likely that diamond devices will be fabricated in the near future from the fullerene adsorbates and replacing those based on volatile aqueous layers. We propose to extend our knowledge about this system by investigating the disruption to the H surface caused by oxygen or isolated surface dangling bonds both of which may lead to hole traps which limit the maximum hole density and mobility. We also intend to investigate the surface diffusion of C60 on the diamond surface and determine whether patterned adsorbed layers are stable at room temperature. This could extend the type of devices that could be fabricated. We will also investigate the optical properties of the adsorbed fullerene and extend the principle of transfer doping to other adsorbates and wide band gap semiconductors such as AlN.
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Organisation Website: http://www.ex.ac.uk