| EPSRC Reference: |
EP/C003071/1 |
| Title: |
Performance, degradation and defect structure of MOS devices using high-k materials as gate dielectrics |
| Principal Investigator: |
Zhang, Professor JF |
| Other Investigators: |
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| Department: |
Engineering Tech and Maritime Operations |
| Organisation: |
Liverpool John Moores University |
| Scheme: |
Standard Research (Pre-FEC) |
| Starts: |
01 February 2005 |
Ends: |
31 March 2008 |
Value (£): |
191,097
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| EPSRC Research Topic Classifications: |
| Electronic Devices & Subsys. |
Energy Efficiency |
| Materials Characterisation |
Solar Technology |
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Summary on Grant Application Form |
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The transistors in integrated circuits have increased in speed and reduced in cost and power consumption because of reduced transistor size in successive technology generations. However, it is not possible to reduce the voltage to the same scaling factors so the electric fields have increased. The silicon dioxide which is used as the gate of these transistors is now so thin that a significant current flows through it because of direct tunnelling. This increases power consumption and reduces reliability. Future transistor generations will need a gate dielectric of higher permittivity (high-k) so allowing a larger physical thickness of dielectric to be used without increasing the equivalent electrical thickness. This is the most important single issue facing the development of a key IT technology and one in which new ideas and approaches to measurement are required. The proposed high-k materials (materials based on hafnium oxide will be studied initially) are physically and chemically very different to silicon dioxide. Considering the importance of this technological leap surprisingly little is known about their interface characteristics with silicon or about the trapping sites in the oxide. In this research programme we will collaborate with IMEC in Belgium, SEMATECH in the USA, NMRC in Ireland and Glasgow University to achieve an understanding of the underlying science of these dielectrics. This will be done by applying both novel research tools and industry standard methods to analyse the interface and bulk trapping centres and to observe their evolution under electrical stress. A key issue will be the role of hydrogen and deuterium in these materials and the physical and electronic structure of the traps.
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Key Findings |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Potential use in non-academic contexts |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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Impacts |
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| Description |
This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk |
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| Date Materialised |
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Sectors submitted by the Researcher |
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This information can now be found on Gateway to Research (GtR) http://gtr.rcuk.ac.uk
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| Project URL: |
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| Further Information: |
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| Organisation Website: |
http://www.livjm.ac.uk |